HMC580ST89
/
580ST89E
v04.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 1 GHz
Features
P1dB Output Power: +22 dBm
Gain: 22 dB
Output IP3: +37 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V
Industry Standard SOT89 Package
Typical Applications
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
The HMC580ST89 / HMC580ST89E is ideal forr:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
• IF & RF Applications
Functional Diagram
General Description
The HMC580ST89 & HMC580ST89E are InGaP
Heterojunction Bipolar Transistor (HBT) Gain
Block MMIC SMT amplifiers covering DC to 1 GHz.
Packaged in an industry standard SOT89, the
amplifier can be used as a cascadable 50 Ohm RF
or IF gain stage as well as a PA or LO driver with
up to +26 dBm output power. The HMC580ST89(E)
offers 22 dB of gain with a +37 dBm output IP3 at 250
MHz, and can operate directly from a +5V supply. The
HMC580ST89(E) exhibits excellent gain and output
power stability over temperature, while requiring a
minimal number of external bias components.
Electrical Specifi cations,
Vs= 5V, Rbias= 1.8 Ohm, T
A
= +25° C
Parameter
Gain
Gain Variation Over Temperature
Input Return Loss
DC - 0.25 GHz
0.25 - 0.50 GHz
0.50 - 1.00 GHz
DC - 1.0 GHz
DC - 0.25 GHz
0.25 - 0.50 GHz
0.50 - 1.00 GHz
DC - 0.50 GHz
0.50 - 1.00 GHz
DC - 1.0 GHz
DC - 0.25 GHz
0.25 - 0.50 GHz
0.50 - 1.00 GHz
DC - 0.25 GHz
0.25 - 0.50 GHz
0.50 - 1.00 GHz
DC - 1.0 GHz
Min.
19
18.5
15
Typ.
22
21
17
0.005
35
28
19
12
11
23
22
20.5
19
37
35
33
2.8
88
110
Max.
Units
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dB
mA
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
19
17.5
16
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
8 - 146
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC580ST89 / 580ST89E
v04.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 1 GHz
Broadband Gain & Return Loss
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
0
0.5
1
1.5
Gain vs. Temperature
24
20
8
+25C
+85C
-40C
RESPONSE (dB)
12
8
4
0
2
2.5
3
0
0.25
0.5
0.75
1
1.25
1.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
-35
-40
-45
0
0.3
0.5
0.8
1
1.3
1.5
FREQUENCY (GHz)
+25C
+85C
-40C
Output Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
+25C
+85C
-40C
-20
-25
0
0.25
0.5
0.75
1
1.25
1.5
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
REVERSE ISOLATION (dB)
-5
Noise Figure vs. Temperature
10
8
-10
-15
-20
-25
-30
-35
0
0.25
0.5
0.75
1
1.25
1.5
FREQUENCY (GHz)
0
0
0.25
0.5
0.75
1
1.25
1.5
FREQUENCY (GHz)
+25C
+85C
-40C
NOISE FIGURE (dB)
6
+25C
+85C
-40C
4
2
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 147
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
GAIN (dB)
S21
S11
S22
16
HMC580ST89 / 580ST89E
v04.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 1 GHz
P1dB vs. Temperature
Psat vs. Temperature
28
24
20
Psat (dBm)
16
12
8
4
0
+25C
+85C
-40C
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
P1dB (dBm)
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0
0.3
0.5
0.8
+25C
+85C
-40C
1
1.3
1.5
0
0.25
0.5
0.75
1
1.25
1.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 vs. Temperature
45
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc = 88 mA @ 850 MHz
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
36
32
28
24
20
16
12
8
4
0
4.5
5
Vs (V)
5.5
Gain
P1dB
Psat
IP3
40
IP3 (dBm)
35
30
+25C
+85C
-40C
25
20
0
0.25
0.5
0.75
1
1.25
1.5
FREQUENCY (GHz)
Vcc vs. Icc Over Temperature for
Fixed Vs= 5V, R
BIAS
= 1.8 Ohms
94
92
90
Icc (mA)
88
86
84
82
80
78
4.82
-40C
+85C
ACPR vs. Channel Output Power
-20
-25
-30
+25C
ACPR (dBc)
-35
-40
-45
-50
-55
-60
-65
WCDMA 140MHz
WCDMA 400MHz
CDMA2000 140MHz
CDMA2000 400MHz
4.83
4.84
Vcc (V)
4.85
4.86
4.87
2
4
6
8
10
12
14
16
18
CHANNEL OUTPUT POWER (dBm)
8 - 148
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC580ST89 / 580ST89E
v04.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 1 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFIN)(Vcc = +4.2 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 9 mW/°C above 85 °C)
Thermal Resistance
(junction to lead)
Storage Temperature
Operating Temperature
ESD Sensitivity (HMB)
+5.5 Vdc
+10 dBm
150 °C
0.59 W
110 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
8 - 149
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL:
MOLDING COMPOUND MP-180S OR EQUIVALENT.
2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING.
3. LEAD PLATING: 100% MATTE TIN.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
HMC580ST89
HMC580ST89E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
H580
XXXX
H580
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC580ST89 / 580ST89E
v04.0710
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 1 GHz
Pin Descriptions
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
Pin Number
Function
Description
Interface Schematic
1
IN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3
OUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins and package bottom
must be connected to RF/DC ground.
Application Circuit
Recommended Bias Resistor Values
for Icc = 88 mA, Rbias = (Vs - Vcc) / Icc, Vs > +5V
Supply Voltage (Vs)
R
BIAS
V
ALUE
R
BIAS
P
OWER
R
ATING
6V
13 Ω
¼W
8V
36 Ω
½W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. R
BIAS
provides DC bias stability over temperature.
Recommended Component Values for Key Application Frequencies with Vs = +5V
Frequency (MHz)
Component
50
L1
C1, C2
Rbias
270 nH
0.01 μF
0 Ohms
250
110 nH
820 pF
1.5 Ohms
400
110 nH
820 pF
1.5 Ohms
900
56 nH
100 pF
1.8 Ohms
8 - 150
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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