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506LP4E

Description
7800 MHz - 8700 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
CategoryTopical application    Wireless rf/communication   
File Size221KB,6 Pages
ManufacturerHittite Microwave(ADI)
Websitehttp://www.hittite.com/
Download Datasheet Parametric Compare View All

506LP4E Overview

7800 MHz - 8700 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER

506LP4E Parametric

Parameter NameAttribute value
Minimum operating frequency7800 MHz
Maximum operating frequency8700 MHz
Minimum operating temperature-40 Cel
Maximum operating temperature85 Cel
Processing package description4 X 4 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, QFN-24
each_compliYes
EU RoHS regulationsYes
stateActive
Microwave RF TypeNARROW BAND LOW POWER
Impedance characteristics50 ohm
structureCOMPONENT
jesd_609_codee3
terminal coatingMATTE TIN (394) OVER COPPER
Maximum voltage standing wave ratio2
dditional_featureLOW NOISE
HMC506LP4
/
506LP4E
v01.0805
MMIC VCO w/ BUFFER
AMPLIFIER, 7.8 - 8.7 GHz
Features
Pout: +14 dBm
Phase Noise: -103 dBc/Hz @100 KHz
No External Resonator Needed
Single Supply: +3V @ 77 mA
QFN Leadless SMT Package, 16 mm
2
Typical Applications
Low noise MMIC VCO w/Buffer Amplifier for:
• VSAT Radio
• Point to Point/Multipoint Radio
• Test Equipment & Industrial Controls
• Military End-Use
Functional Diagram
General Description
The HMC506LP4 & HMC506LP4E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC VCOs
with integrated resonators, negative resistance
devices, varactor diodes, and buffer amplifiers.
Covering 7.8 to 8.7 GHz, the VCO’s phase noise
performance is excellent over temperature, shock
and vibration due to the oscillator’s monolithic struc-
ture. Power output is +14 dBm typical from a single
supply of +3.0V @ 77 mA. The voltage controlled
oscillator is packaged in a leadless QFN 4 x 4 mm
surface mount package.
11
VCO
S
& PLOs - SMT
Electrical Specifi cations,
T
A
= +25° C, Vcc = +3V
Parameter
Frequency Range
Power Output
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output
Tune Voltage (Vtune)
Supply Current (Icc) (Vcc = +3.0V)
Tune Port Leakage Current
Output Return Loss
Harmonics
2nd
3rd
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= +5V
Frequency Drift Rate
7
-16
-28
28
78
0.85
1
77
10
11.0
Min.
Typ.
7.8 - 8.7
14.0
-103
11
Max.
Units
GHz
dBm
dBc/Hz
V
mA
μA
dB
dBc
dBc
MHz pp
MHz/V
MHz/°C
11 - 102
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

506LP4E Related Products

506LP4E HMC506LP4E HMC506LP4_08
Description 7800 MHz - 8700 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 7800 MHz - 8700 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 7800 MHz - 8700 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
Minimum operating frequency 7800 MHz 7800 MHz 7800 MHz
Maximum operating frequency 8700 MHz 8700 MHz 8700 MHz
Minimum operating temperature -40 Cel -40 °C -40 Cel
Maximum operating temperature 85 Cel 85 °C 85 Cel
structure COMPONENT COMPONENT COMPONENT
Maximum voltage standing wave ratio 2 2 2
Processing package description 4 X 4 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, QFN-24 - 4 X 4 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, QFN-24
each_compli Yes - Yes
EU RoHS regulations Yes - Yes
state Active - Active
Microwave RF Type NARROW BAND LOW POWER - NARROW BAND LOW POWER
Impedance characteristics 50 ohm - 50 ohm
jesd_609_code e3 - e3
terminal coating MATTE TIN (394) OVER COPPER - MATTE TIN (394) OVER COPPER
dditional_feature LOW NOISE - LOW NOISE
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