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HMC506LP4E

Description
7800 MHz - 8700 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
CategoryWireless rf/communication    Radio frequency and microwave   
File Size221KB,6 Pages
ManufacturerHittite Microwave(ADI)
Websitehttp://www.hittite.com/
Environmental Compliance
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HMC506LP4E Overview

7800 MHz - 8700 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER

HMC506LP4E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerHittite Microwave(ADI)
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW NOISE
Characteristic impedance50 Ω
structureCOMPONENT
JESD-609 codee3
Maximum operating frequency8700 MHz
Minimum operating frequency7800 MHz
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
RF/Microwave Device TypesNARROW BAND LOW POWER
Terminal surfaceMatte Tin (Sn)
Maximum voltage standing wave ratio2
HMC506LP4
/
506LP4E
v01.0805
MMIC VCO w/ BUFFER
AMPLIFIER, 7.8 - 8.7 GHz
Features
Pout: +14 dBm
Phase Noise: -103 dBc/Hz @100 KHz
No External Resonator Needed
Single Supply: +3V @ 77 mA
QFN Leadless SMT Package, 16 mm
2
Typical Applications
Low noise MMIC VCO w/Buffer Amplifier for:
• VSAT Radio
• Point to Point/Multipoint Radio
• Test Equipment & Industrial Controls
• Military End-Use
Functional Diagram
General Description
The HMC506LP4 & HMC506LP4E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC VCOs
with integrated resonators, negative resistance
devices, varactor diodes, and buffer amplifiers.
Covering 7.8 to 8.7 GHz, the VCO’s phase noise
performance is excellent over temperature, shock
and vibration due to the oscillator’s monolithic struc-
ture. Power output is +14 dBm typical from a single
supply of +3.0V @ 77 mA. The voltage controlled
oscillator is packaged in a leadless QFN 4 x 4 mm
surface mount package.
11
VCO
S
& PLOs - SMT
Electrical Specifi cations,
T
A
= +25° C, Vcc = +3V
Parameter
Frequency Range
Power Output
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output
Tune Voltage (Vtune)
Supply Current (Icc) (Vcc = +3.0V)
Tune Port Leakage Current
Output Return Loss
Harmonics
2nd
3rd
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= +5V
Frequency Drift Rate
7
-16
-28
28
78
0.85
1
77
10
11.0
Min.
Typ.
7.8 - 8.7
14.0
-103
11
Max.
Units
GHz
dBm
dBc/Hz
V
mA
μA
dB
dBc
dBc
MHz pp
MHz/V
MHz/°C
11 - 102
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

HMC506LP4E Related Products

HMC506LP4E 506LP4E HMC506LP4_08
Description 7800 MHz - 8700 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 7800 MHz - 8700 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 7800 MHz - 8700 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
structure COMPONENT COMPONENT COMPONENT
Maximum operating frequency 8700 MHz 8700 MHz 8700 MHz
Minimum operating frequency 7800 MHz 7800 MHz 7800 MHz
Maximum operating temperature 85 °C 85 Cel 85 Cel
Minimum operating temperature -40 °C -40 Cel -40 Cel
Maximum voltage standing wave ratio 2 2 2
Processing package description - 4 X 4 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, QFN-24 4 X 4 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, QFN-24
each_compli - Yes Yes
EU RoHS regulations - Yes Yes
state - Active Active
Microwave RF Type - NARROW BAND LOW POWER NARROW BAND LOW POWER
Impedance characteristics - 50 ohm 50 ohm
jesd_609_code - e3 e3
terminal coating - MATTE TIN (394) OVER COPPER MATTE TIN (394) OVER COPPER
dditional_feature - LOW NOISE LOW NOISE
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