HMC474MP86
/
474MP86E
v01.0906
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Typical Applications
Features
Gain: 15.5 dB
P1dB Output Power: +8 dBm
Output IP3: +22 dBm
Cascadable 50 Ohm I/Os
Single Supply: +3V to +10V
Included in the HMC-DK001 Designer’s Kit
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
The HMC474MP86 & HMC474MP86E is an ideal
RF/IF gain block for:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Functional Diagram
General Description
The HMC474MP86 & HMC474MP86E are general
purpose SiGe Heterojunction Bipolar Transistor (HBT)
Gain Block MMIC SMT amplifiers covering DC to 6
GHz. This Micro-P packaged amplifier can be used
as a cascadable 50 Ohm RF/IF gain stage with up to
+10 dBm output power. The HMC474MP86(E) offer
15.5 dB of gain with a +22 dBm output IP3 at 850
MHz while requiring only 25 mA from a single positive
supply. The Darlington feedback pair used results in
reduced sensitivity to normal process variations and
excellent gain stability over temperature while requiring
a minimal number of external bias components.
Electrical Specifi cations,
Vs= 5V, Rbias= 110 Ohm, T
A
= +25° C
Parameter
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
5.0 - 6.0 GHz
DC - 6 GHz
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 5.0 GHz
5.0 - 6.0 GHz
DC - 5 GHz
5.0 - 6.0 GHz
DC - 4 GHz
0.5 - 4.0 GHz
4.0 - 5.0 GHz
5.0 - 6.0 GHz
0.5 - 4.0 GHz
4.0 - 5.0 GHz
5.0 - 6.0 GHz
DC - 5 GHz
5.0 - 6.0 GHz
5
4
3
Min.
13
12
10
9
8
7
Typ.
15.5
14
12
11
10
9
0.01
15
16
19
16
17
13
17
8
7
6
22
20
17
3
3.4
25
0.015
Max.
Units
dB
dB
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
9 - 60
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC474MP86
/
474MP86E
v01.0906
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Broadband Gain & Return Loss
20
15
10
RESPONSE (dB)
Gain vs. Temperature
20
18
16
14
GAIN (dB)
9
+25 C
+85 C
-40 C
5
0
-5
-10
S21
S11
S22
12
10
8
6
4
-15
-20
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
2
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
+25 C
+85 C
-40 C
Output Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-5
RETURN LOSS (dB)
+25 C
+85 C
-40 C
-10
-10
-15
-15
-20
-20
-25
0
1
2
3
4
5
6
FREQUENCY (GHz)
-25
0
1
2
3
4
5
6
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
REVERSE ISOLATION (dB)
Noise Figure vs. Temperature
6
5
NOISE FIGURE (dB)
4
3
2
1
0
+25 C
+85 C
-40 C
-5
+25 C
+85 C
-40 C
-10
-15
-20
-25
0
1
2
3
4
5
6
FREQUENCY (GHz)
0
1
2
3
4
5
6
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 61
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
HMC474MP86
/
474MP86E
v01.0906
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
P1dB vs. Temperature
12
10
8
6
4
2
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
+25 C
+85 C
-40 C
Psat vs. Temperature
12
10
8
6
4
2
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
+25 C
+85 C
-40 C
P1dB (dBm)
Output IP3 vs. Temperature
30
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc= 25 mA @ 850 MHz
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
32
28
24
20
16
12
8
4
0
3
4
5
6
7
8
9
10
Vs (Vdc)
Gain
P1dB
Psat
OIP3
25
OIP3 (dBm)
20
15
+25 C
+85 C
-40 C
10
5
0
1
2
3
4
5
6
FREQUENCY (GHz)
Icc vs. Vcc Over Temperature for
Fixed Vs= 5V, R
BIAS
= 110 Ohms
28
27
26
Icc (mA)
25
24
23
-40 C
22
21
20
2
2.1
2.2
2.3
Vcc (Vdc)
2.4
2.5
2.6
+25 C
+85 C
Gain, Power & OIP3 vs. Supply Voltage
for Rs = 110 Ohms @ 850 MHz
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
32
28
24
20
16
12
8
4
0
4.75
Gain
P1dB
Psat
OIP3
Psat (dBm)
5
Vs (Vdc)
5.25
9 - 62
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC474MP86
/
474MP86E
v01.0906
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Collector Bias Current (Icc)
RF Input Power (RFIN)(Vcc = +2.4 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 4.3 mW/°C above 85 °C)
Thermal Resistance
(junction to lead)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+6.0 Vdc
35 mA
+5 dBm
150 °C
0.280 W
232 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1B
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9 - 63
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
5. THE MICRO-P PACKAGE IS DIMENSIONALLY
COMPATIBLE WITH THE “MICRO-X PACKAGE”
Package Information
Part Number
HMC474MP86
HMC474MP86E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
474
474
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC474MP86
/
474MP86E
v01.0906
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Pin Descriptions
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Pin Number
Function
Description
Interface Schematic
1
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3
RFOUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins must be connected to RF/DC ground.
Application Circuit
Recommended Bias Resistor Values
for Icc= 25 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
R
BIAS
V
ALUE
R
BIAS
P
OWER
R
ATING
3V
30 Ω
1/8 W
5V
110 Ω
1/8 W
6V
150 Ω
1/4 W
8V
240 Ω
1/2 W
10V
300 Ω
1/2 W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. R
BIAS
provides DC bias stability over temperature.
Recommended Component Values for Key Application Frequencies
Frequency (MHz)
Component
50
L1
C1, C2
270 nH
0.01 μF
900
56 nH
100 pF
1900
18 nH
100 pF
2200
18 nH
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
5200
6.8 nH
100 pF
5500
3.3 nH
100 pF
9 - 64
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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