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479ST89E

Description
0MHz - 5000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
CategoryTopical application    Wireless rf/communication   
File Size237KB,6 Pages
ManufacturerHittite Microwave(ADI)
Websitehttp://www.hittite.com/
Download Datasheet Parametric Compare View All

479ST89E Overview

0MHz - 5000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

479ST89E Parametric

Parameter NameAttribute value
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum input power17 dBm
Maximum operating frequency5000 MHz
Minimum operating frequency0.0 MHz
Processing package descriptionROHS COMPLIANT, PLASTIC, SMT, SOT-89, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
structureCOMPONENT
terminal coatingMATTE TIN (394) OVER COPPER
Impedance characteristics50 ohm
Microwave RF TypeWIDE BAND LOW POWER
HMC479ST89
/
479ST89E
v02.0710
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5 GHz
Features
P1dB Output Power: +18 dBm
Gain: 15 dB
Output IP3: +33 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V to +12V
Industry Standard SOT89 Package
Included in the HMC-DK001 Designer’s Kit
Typical Applications
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
The HMC479ST89 / HMC479ST89E is an ideal RF/IF
gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Functional Diagram
General Description
The HMC479ST89 & HMC479ST89E are SiGe
Heterojunction Bipolar Transistor (HBT) Gain Block
MMIC SMT amplifiers covering DC to 5 GHz. Packaged
in an industry standard SOT89, the amplifier can be
used as a cascadable 50 Ohm RF/IF gain stage as
well as a LO or PA driver with up to +20 dBm output
power. The HMC479ST89 offers 15 dB of gain with a
+33 dBm output IP3 at 850 MHz while requiring only
75 mA from a single positive supply. The Darlington
feedback pair used results in reduced sensitivity to
normal process variations and excellent gain stability
over temperature while requiring a minimal number of
external bias components.
Electrical Specifi cations,
Vs= 8.0 V, Rbias= 51 Ohm, T
A
= +25° C
Parameter
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 5 GHz
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 1.0 GHz
1.0 - 5.0 GHz
DC - 5 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
0.5 - 1.0 GHz
1.0 - 2.5 GHz
2.5 - 4.0 GHz
4.0 - 5.0 GHz
DC - 3.0 GHz
3.0 - 5.0 GHz
Min.
12.5
11.5
10.5
9.5
8.5
Typ.
15
13.5
12.5
11.5
10.5
0.008
12
16
18
22
20
22
18
18
16
14
13
11
33
30
25
23
4.0
4.5
75
Max.
Units
dB
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
Gain
Gain Variation Over Temperature
Input Return Loss
0.012
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
15
13
11
10
8
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
8 - 116
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com

479ST89E Related Products

479ST89E HMC479ST89E HMC479ST89_10
Description 0MHz - 5000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 0MHz - 5000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 0MHz - 5000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Maximum operating temperature 85 Cel 85 °C 85 Cel
Minimum operating temperature -40 Cel -40 °C -40 Cel
Maximum operating frequency 5000 MHz 5000 MHz 5000 MHz
Minimum operating frequency 0.0 MHz - 0.0 MHz
structure COMPONENT COMPONENT COMPONENT
Maximum input power 17 dBm - 17 dBm
Processing package description ROHS COMPLIANT, PLASTIC, SMT, SOT-89, 3 PIN - ROHS COMPLIANT, PLASTIC, SMT, SOT-89, 3 PIN
Lead-free Yes - Yes
EU RoHS regulations Yes - Yes
state ACTIVE - ACTIVE
terminal coating MATTE TIN (394) OVER COPPER - MATTE TIN (394) OVER COPPER
Impedance characteristics 50 ohm - 50 ohm
Microwave RF Type WIDE BAND LOW POWER - WIDE BAND LOW POWER
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