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481MP86E

Description
0 MHz - 5000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
CategoryTopical application    Wireless rf/communication   
File Size224KB,6 Pages
ManufacturerHittite Microwave(ADI)
Websitehttp://www.hittite.com/
Download Datasheet Parametric Compare View All

481MP86E Overview

0 MHz - 5000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

481MP86E Parametric

Parameter NameAttribute value
Maximum input power10 dBm
Number of terminals4
Minimum operating frequency0.0 MHz
Maximum operating frequency5000 MHz
Minimum operating temperature-40 Cel
Maximum operating temperature85 Cel
Processing package descriptionROHS COMPLIANT, PLASTIC, SMT, MICRO-P-4
each_compliYes
EU RoHS regulationsYes
stateActive
Microwave RF TypeWIDE BAND LOW POWER
Impedance characteristics50 ohm
structureCOMPONENT
Gain9 dB
jesd_609_codee3
Number of functions1
Packaging MaterialsPLASTIC/EPOXY
ckage_equivalence_codeSL,4GW-LD,.085CIR
wer_supplies__v_8
sub_categoryRF/Microwave Amplifiers
Maximum supply voltage85 mA
CraftsmanshipBIPOLAR
terminal coatingMATTE TIN (394) OVER COPPER
HMC481MP86
/
481MP86E
v03.0810
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5 GHz
Typical Applications
Features
P1dB Output Power: +20 dBm
Gain: 20 dB
Output IP3: +33 dBm
Cascadable 50 Ohm I/Os
Single Supply: +6V to +12V
Included in the HMC-DK001 Designer’s Kit
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
The HMC481MP86 / HMC481MP86E is an ideal RF/
IF gain block & LO or PA driver for:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio& Test Equipment
Functional Diagram
General Description
The HMC481MP86 & HMC481MP86E are SiGe
Heterojunction Bipolar Transistor (HBT) Gain Block
MMIC SMT amplifiers covering DC to 5 GHz. This
Micro-P packaged amplifier can be used as a cas-
cadable 50 Ohm RF/IF gain stage as well as a LO
or PA driver with up to +21 dBm output power. The
HMC481MP86(E) offers 20 dB of gain with a +33 dBm
output IP3 at 850 MHz while requiring only 74 mA
from a single positive supply. The Darlington feedback
pair used results in reduced sensitivity to normal
process variations and excellent gain stability over
temperature while requiring a minimal number of
external bias components.
Electrical Specifi cations,
Vs= 8.0 V, Rbias= 39 Ohm, T
A
= +25° C
Parameter
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 5 GHz
DC - 1.0 GHz
1.0 - 5.0 GHz
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 5 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 5.0 GHz
16
15
14
12
9
Min.
18.5
15.5
12.5
10.5
9.0
Typ.
20.0
17.0
14.0
12.0
10.5
0.008
13
17
20
25
15
18
20
18
17
15
12
33
31
29
26
3.5
4.0
4.5
74
85
0.012
Max.
Units
dB
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
mA
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
8-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com

481MP86E Related Products

481MP86E HMC481MP86E HMC481MP86_10
Description 0 MHz - 5000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 0 MHz - 5000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 0 MHz - 5000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Number of terminals 4 4 4
Minimum operating frequency 0.0 MHz - 0.0 MHz
Maximum operating frequency 5000 MHz 5000 MHz 5000 MHz
Minimum operating temperature -40 Cel -40 °C -40 Cel
Maximum operating temperature 85 Cel 85 °C 85 Cel
structure COMPONENT COMPONENT COMPONENT
Gain 9 dB 9 dB 9 dB
Number of functions 1 1 1
Maximum input power 10 dBm - 10 dBm
Processing package description ROHS COMPLIANT, PLASTIC, SMT, MICRO-P-4 - ROHS COMPLIANT, PLASTIC, SMT, MICRO-P-4
each_compli Yes - Yes
EU RoHS regulations Yes - Yes
state Active - Active
Microwave RF Type WIDE BAND LOW POWER - WIDE BAND LOW POWER
Impedance characteristics 50 ohm - 50 ohm
jesd_609_code e3 - e3
Packaging Materials PLASTIC/EPOXY - PLASTIC/EPOXY
ckage_equivalence_code SL,4GW-LD,.085CIR - SL,4GW-LD,.085CIR
wer_supplies__v_ 8 - 8
sub_category RF/Microwave Amplifiers - RF/Microwave Amplifiers
Maximum supply voltage 85 mA - 85 mA
Craftsmanship BIPOLAR - BIPOLAR
terminal coating MATTE TIN (394) OVER COPPER - MATTE TIN (394) OVER COPPER
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