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386LP4E

Description
2600 MHz - 2800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
CategoryTopical application    Wireless rf/communication   
File Size197KB,4 Pages
ManufacturerHittite Microwave(ADI)
Websitehttp://www.hittite.com/
Download Datasheet Parametric Compare View All

386LP4E Overview

2600 MHz - 2800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER

386LP4E Parametric

Parameter NameAttribute value
Minimum operating frequency2600 MHz
Maximum operating frequency2800 MHz
Minimum operating temperature-40 Cel
Maximum operating temperature85 Cel
Processing package description4 X 4 MM, ROHS COMPLIANT, PLASTIC, LEADLESS, SMT, QFN-24
each_compliYes
EU RoHS regulationsYes
stateActive
Microwave RF TypeNARROW BAND LOW POWER
Impedance characteristics50 ohm
structureCOMPONENT
jesd_609_codee3
terminal coatingMATTE TIN (394) OVER COPPER
Maximum voltage standing wave ratio2
dditional_featureLOW NOISE
HMC386LP4
/
386LP4E
v04.1209
MMIC VCO w/ BUFFER
AMPLIFIER, 2.6 - 2.8 GHz
Typical Applications
Low noise MMIC VCO w/Buffer Amplifier for:
• Wireless Infrastructure
• Industrial Controls
• Test Equipment
• Military
Features
Pout: +5 dBm
Phase Noise: -114 dBc/Hz @100 kHz
No External Resonator Needed
Single Supply: 3V @ 35mA
24 Lead 4x4mm QFN Package: 16 mm
2
Functional Diagram
General Description
The HMC386LP4 & HMC386LP4E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC VCOs
with integrated resonators, negative resistance
devices, varactor diodes, and buffer amplifiers.
Covering 2.6 to 2.8 GHz, the VCO’s phase noise
performance is excellent over temperature, shock,
vibration and process due to the oscillator’s mono-
lithic structure. Power output is 5 dBm typical from a
single supply of 3V @ 35mA. The voltage controlled
oscillator is packaged in a low cost leadless QFN 4x4
mm surface mount package.
12
VCOS - SMT
Electrical Specifi cations,
T
A
= +25 °C, Vcc = +3V
Parameter
Frequency Range
Power Output
SSB Phase Noise @ 100 kHz Offset, Vtune = +5V @ RF Output
Tune Voltage (Vtune)
Supply Current (Icc) (Vcc = +3V)
Tune Port Leakage Current
Output Return Loss
Harmonics
2nd
3rd
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune = +5V
Frequency Drift Rate
9
-5
-15
3
2
0.3
0
35
10
2
Min.
Typ.
2.6 - 2.8
5
-114
10
Max.
Units
GHz
dBm
dBc/Hz
V
mA
μA
dB
dBc
dBc
MHz pp
MHz/V
MHz/°C
12 - 14
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

386LP4E Related Products

386LP4E HMC386LP4E HMC386LP4_10
Description 2600 MHz - 2800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 2600 MHz - 2800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 2600 MHz - 2800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
Minimum operating frequency 2600 MHz 2600 MHz 2600 MHz
Maximum operating frequency 2800 MHz 2800 MHz 2800 MHz
Minimum operating temperature -40 Cel -40 °C -40 Cel
Maximum operating temperature 85 Cel 85 °C 85 Cel
structure COMPONENT COMPONENT COMPONENT
Maximum voltage standing wave ratio 2 2 2
Processing package description 4 X 4 MM, ROHS COMPLIANT, PLASTIC, LEADLESS, SMT, QFN-24 - 4 X 4 MM, ROHS COMPLIANT, PLASTIC, LEADLESS, SMT, QFN-24
each_compli Yes - Yes
EU RoHS regulations Yes - Yes
state Active - Active
Microwave RF Type NARROW BAND LOW POWER - NARROW BAND LOW POWER
Impedance characteristics 50 ohm - 50 ohm
jesd_609_code e3 - e3
terminal coating MATTE TIN (394) OVER COPPER - MATTE TIN (394) OVER COPPER
dditional_feature LOW NOISE - LOW NOISE
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