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HMC386LP4E

Description
2600 MHz - 2800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
CategoryWireless rf/communication    Radio frequency and microwave   
File Size197KB,4 Pages
ManufacturerHittite Microwave(ADI)
Websitehttp://www.hittite.com/
Environmental Compliance
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HMC386LP4E Overview

2600 MHz - 2800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER

HMC386LP4E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerHittite Microwave(ADI)
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW NOISE
Characteristic impedance50 Ω
structureCOMPONENT
JESD-609 codee3
Maximum operating frequency2800 MHz
Minimum operating frequency2600 MHz
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
RF/Microwave Device TypesNARROW BAND LOW POWER
Terminal surfaceMatte Tin (Sn)
Maximum voltage standing wave ratio2
HMC386LP4
/
386LP4E
v04.1209
MMIC VCO w/ BUFFER
AMPLIFIER, 2.6 - 2.8 GHz
Typical Applications
Low noise MMIC VCO w/Buffer Amplifier for:
• Wireless Infrastructure
• Industrial Controls
• Test Equipment
• Military
Features
Pout: +5 dBm
Phase Noise: -114 dBc/Hz @100 kHz
No External Resonator Needed
Single Supply: 3V @ 35mA
24 Lead 4x4mm QFN Package: 16 mm
2
Functional Diagram
General Description
The HMC386LP4 & HMC386LP4E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC VCOs
with integrated resonators, negative resistance
devices, varactor diodes, and buffer amplifiers.
Covering 2.6 to 2.8 GHz, the VCO’s phase noise
performance is excellent over temperature, shock,
vibration and process due to the oscillator’s mono-
lithic structure. Power output is 5 dBm typical from a
single supply of 3V @ 35mA. The voltage controlled
oscillator is packaged in a low cost leadless QFN 4x4
mm surface mount package.
12
VCOS - SMT
Electrical Specifi cations,
T
A
= +25 °C, Vcc = +3V
Parameter
Frequency Range
Power Output
SSB Phase Noise @ 100 kHz Offset, Vtune = +5V @ RF Output
Tune Voltage (Vtune)
Supply Current (Icc) (Vcc = +3V)
Tune Port Leakage Current
Output Return Loss
Harmonics
2nd
3rd
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune = +5V
Frequency Drift Rate
9
-5
-15
3
2
0.3
0
35
10
2
Min.
Typ.
2.6 - 2.8
5
-114
10
Max.
Units
GHz
dBm
dBc/Hz
V
mA
μA
dB
dBc
dBc
MHz pp
MHz/V
MHz/°C
12 - 14
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

HMC386LP4E Related Products

HMC386LP4E 386LP4E HMC386LP4_10
Description 2600 MHz - 2800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 2600 MHz - 2800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 2600 MHz - 2800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
structure COMPONENT COMPONENT COMPONENT
Maximum operating frequency 2800 MHz 2800 MHz 2800 MHz
Minimum operating frequency 2600 MHz 2600 MHz 2600 MHz
Maximum operating temperature 85 °C 85 Cel 85 Cel
Minimum operating temperature -40 °C -40 Cel -40 Cel
Maximum voltage standing wave ratio 2 2 2
Processing package description - 4 X 4 MM, ROHS COMPLIANT, PLASTIC, LEADLESS, SMT, QFN-24 4 X 4 MM, ROHS COMPLIANT, PLASTIC, LEADLESS, SMT, QFN-24
each_compli - Yes Yes
EU RoHS regulations - Yes Yes
state - Active Active
Microwave RF Type - NARROW BAND LOW POWER NARROW BAND LOW POWER
Impedance characteristics - 50 ohm 50 ohm
jesd_609_code - e3 e3
terminal coating - MATTE TIN (394) OVER COPPER MATTE TIN (394) OVER COPPER
dditional_feature - LOW NOISE LOW NOISE

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