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HMC374_09

Description
300 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
CategoryTopical application    Wireless rf/communication   
File Size212KB,6 Pages
ManufacturerHittite Microwave(ADI)
Websitehttp://www.hittite.com/
Download Datasheet Parametric Compare View All

HMC374_09 Overview

300 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER

HMC374_09 Parametric

Parameter NameAttribute value
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum input power15 dBm
Maximum operating frequency3000 MHz
Minimum operating frequency300 MHz
Processing package description0.118 X 0.118 INCH, ROHS COMPLIANT, PLASTIC, SMT, SOT-26, 6 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
structureCOMPONENT
terminal coatingMATTE TIN (394) OVER COPPER
Impedance characteristics50 ohm
Microwave RF TypeWIDE BAND MEDIUM POWER
HMC374
/
374E
v00.0405
SMT PHEMT LOW NOISE
AMPLIFIER, 0.3 - 3.0 GHz
8
LOW NOISE AMPLIFIERS - SMT
Typical Applications
The HMC374 / HMC374E is ideal for:
• Cellular/PCS/3G
• WCS, MMDS & ISM
• Fixed Wireless & WLAN
• Private Land Mobile Radio
Features
Single Supply: Vdd = +2.75 to +5.5V
Low Noise Figure: 1.5 dB
High Output IP3: +37 dBm
No External Matching Required
Functional Diagram
General Description
The HMC374 & HMC374E are general purpose broad
band Low Noise Amplifiers (LNA) for use in the 0.3 -
3 GHz frequency range. The LNA provides 15 dB of
gain and a 1.5 dB noise figure from a single positive
supply of +2.75 to +5.5V. The low noise figure coupled
with a high P1dB (22 dBm) and high OIP3 (37 dBm)
make this part ideal for cellular applications. The
compact LNA design utilizes on-chip matching for
repeatable gain and noise figure performance. To
minimize board area the design is offered in a low cost
SOT26 package that occupies only 0.118” x 0.118”.
Electrical Specifi cations,
T
A
= +25° C, Vdd= +5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd) (Vdd = +5V)
12
Min.
Typ.
0.3 - 1.0
15
0.01
1.5
5
7
22
23
37
90
0.02
1.9
10
Max.
Min.
Typ.
1.0 - 2.0
13
0.01
1.6
8
9
22
23
37
90
0.02
2.0
6
Max.
Min.
Typ.
2.0 - 3.0
9
0.01
1.8
13
9
22
23
37
90
0.02
2.2
Max.
Units
GHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
mA
8 - 60
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

HMC374_09 Related Products

HMC374_09 374E
Description 300 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 300 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Maximum operating temperature 85 Cel 85 Cel
Minimum operating temperature -40 Cel -40 Cel
Maximum input power 15 dBm 15 dBm
Maximum operating frequency 3000 MHz 3000 MHz
Minimum operating frequency 300 MHz 300 MHz
Processing package description 0.118 X 0.118 INCH, ROHS COMPLIANT, PLASTIC, SMT, SOT-26, 6 PIN 0.118 X 0.118 INCH, ROHS COMPLIANT, PLASTIC, SMT, SOT-26, 6 PIN
Lead-free Yes Yes
EU RoHS regulations Yes Yes
state ACTIVE ACTIVE
structure COMPONENT COMPONENT
terminal coating MATTE TIN (394) OVER COPPER MATTE TIN (394) OVER COPPER
Impedance characteristics 50 ohm 50 ohm
Microwave RF Type WIDE BAND MEDIUM POWER WIDE BAND MEDIUM POWER
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