SBJ2620 ... SBJ2645
SBJ2620 ... SBJ2645
Schottky Barrier Rectifier Diodes – Single Diode
Schottky-Barrier-Gleichrichterdioden – Einzeldiode
Version 2010-09-30
10.1
Ø 3.2
15
4.5
±0.2
±0.3
±0.3
±0.2
2.6
±0.2
Nominal current
Nennstrom
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Isolated plastic case
Isoliertes Kunststoffgehäuse
1
3
26 A
20...45 V
ITO-220AC
1.8 g
±0.2
±0.3
1
2.6
±0.2
13.6
3
1.3
8.4
Type
Typ
2.7
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
0.6
±0.1
0.7
±0.2
5.08
±0.1
Dimensions - Maße [mm]
Maximum ratings and Characteristics
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
20
30
40
45
Surge peak reverse voltage
Stoßspitzensperrspannung
V
RSM
[V]
20
30
40
45
3.8
Grenz- und Kennwerte
Forward voltage
Durchlass-Spannung
V
F
[V]
1
)
I
F
= 5 A
I
F
= 26 A
< 0.58
< 0.58
< 0.58
< 0.58
< 0.50
< 0.50
< 0.50
< 0.50
SBJ2620
SBJ2630
SBJ2640
SBJ2645
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
in DC forward mode – bei Gleichstrom-Durchlassbetrieb
T
C
= 100°C
f > 15 Hz
SBJ2620... T
A
= 25°C
SBJ2645
T
A
= 25°C
I
FAV
I
FRM
I
FSM
i
2
t
T
j
T
j
18 A
55 A
2
)
280/320 A
390 A
2
s
-50...+150°C
≤ 200°C
1
2
T
j
= 25°C
Max. temperature of the case T
C
= 100°C – Max. Temperatur des Gehäuses T
C
= 100°C
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© Diotec Semiconductor AG
1
SBJ2620 ... SBJ2645
Characteristics
Leakage current
Sperrstrom
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
T
j
= 25°C
T
j
= 100°C
V
R
= V
RRM
V
R
= V
RRM
I
R
I
R
R
thC
Kennwerte
< 500 µA
< 20 mA
< 3.0 K/W
120
[%]
100
10
2
[A]
SBJ2620...SBJ2645
10
80
1
60
40
10
-1
20
I
FAV
0
0
T
C
50
100
150
[°C]
I
F
10
-2
0
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Gehäusetemperatur
0.4
0.6
1.0
V
F
[V]
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
2
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© Diotec Semiconductor AG