SBT1820 … SBT1845
SBT1820 … SBT1845
Schottky Barrier Rectifiers – Single Diode
Schottky-Barrier-Gleichrichter – Einzeldiode
Version 2011-06-27
10
±0.2
3
4
3.8
Type
Typ
Nominal current – Nennstrom
4
18 A
20...45 V
TO-220AC
1.8 g
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case – Kunststoffgehäuse
Weight approx. – Gewicht ca.
15.7
1 2 3
3.4
13.2
1.5
0.9
5.08
1 2 3
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
Dimensions - Maße [mm]
Green Molding
Halogen-Free
1
Typische Anwendungen
Typical Applications
Bypass Diodes – best trade-off between V
F
and I
R 2
)
Free-Wheeling Diodes
High Frequent Output Rectification
Bypass-Dioden – optimales V
F
und I
R 2
)
Freilaufdioden
Hochfrequenz-Ausgangsgleichrichtung
Maximum ratings and Characteristics
Type
Typ
Repetitive / Surge peak reverse voltage
Periodische- / Spitzen-Sperrspannung
V
RRM
[V] / V
RSM
[V]
20
30
40
45
Forward Voltage
Durchlass-Spannung
V
F
[V] T
j
= 125°C
I
F
= 5 A
SBT1820
SBT1830
SBT1840
SBT1845
typ. 0.33
typ. 0.33
typ. 0.33
typ. 0.33
T
C
= 100°C
f > 15 Hz
SBT1820... T
A
= 25°C
SBT1845
T
A
= 25°C
Grenz- und Kennwerte
Forward voltage
Durchlass-Spannung
V
F
[V] T
j
= 25°C
I
F
= 5 A
< 0.50
< 0.50
< 0.50
< 0.50
I
FAV
I
FRM
I
FSM
i
2
t
T
j
T
j
I
F
= 18 A
< 0.58
< 0.58
< 0.58
< 0.58
18 A
55 A
3
)
280/320 A
390 A
2
s
-50...+150°C
≤ 200°C
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
in DC forward mode – bei Gleichstrom-Durchlassbetrieb
1
2
3
From 4Q/2011 – Ab 4Q/2011
For more details, ask for the Diotec Application Note “Reliability of Bypass Diodes”
Weitere Infos in der Diotec Applikationsschrift „Reliability of Bypass Diodes”
Max. temperature of the case T
C
= 100°C – Max. Temperatur des Gehäuses T
C
= 100°C
http://www.diotec.com/
© Diotec Semiconductor AG
1
SBT1820 … SBT1845
Characteristics
Leakage current
Sperrstrom
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
T
j
= 25°C
T
j
= 100°C
V
R
= V
RRM
V
R
= V
RRM
I
R
I
R
R
thC
Kennwerte
< 500 µA
< 20 mA
< 1.5 K/W
120
[%]
100
10
2
[A]
T
j
= 125°C
10
80
1
T
j
= 25°C
60
40
10
-1
20
I
FAV
0
0
T
C
50
100
150
[°C]
I
F
10
-2
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Temp. Des Gehäuses
0
0.4
0.6
1.0
V
F
[V]
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
10
2
T
j
= 150°C
[mA]
T
j
= 125°C
10
1
T
j
= 100°C
1
T
j
= 75°C
10
-1
I
R
10
-2
0
V
RRM
40
T
j
= 50°C
T
j
= 25°C
60
80
100 [%]
Typ. instantaneous leakage current vs. rev. voltage
Typ. Sperrstrom (Augenblickswert) ü. Sperrspannung
2
http://www.diotec.com/
© Diotec Semiconductor AG
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