APT60GT60BR
600V
116A
Thunderbolt IGBT
™
TO-247
The Thunderbolt
is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior
ruggedness and ultrafast switching speed.
IGBT
™
• Low Forward Voltage Drop
• Low Tail Current
• Avalanche Rated
MAXIMUM RATINGS
Symbol
V
CES
V
CGR
V
EC
V
GE
I
C1
I
C2
I
CM1
I
CM2
E
AS
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
• High Freq. Switching to 150KHz
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
G
C
E
C
G
E
All Ratings: T
C
= 25°C unless otherwise specified.
Collector-Gate Voltage (R
GE
= 20KΩ)
Emitter-Collector Voltage
Gate-Emitter Voltage
JE
C
SP T
EC IVE
IF T
IC EC
AT H
IO NI
C
N A
1
L
600
600
15
±20
116
60
220
120
65
500
300
TYP
APT60GT60BR
UNIT
Volts
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 105°C
Pulsed Collector Current
@ T
C
= 25°C
Amps
Pulsed Collector Current
1
@ T
C
= 105°C
2
Single Pulse Avalanche Energy
Total Power Dissipation
mJ
Watts
°C
Operating and Storage Junction Temperature Range
-55 to 150
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
CES
RBV
CES
V
GE
(TH)
V
CE
(ON)
Characteristic / Test Conditions
MIN
MAX
UNIT
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.5mA, T
j
= -55°C)
Collector-Emitter Reverse Breakdown Voltage (V
GE
= 0V, I
C
= 50mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 700µA, T
j
= 25°C)
600
-15
3
4
5
2.5
2.8
80
2000
±100
Volts
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 25°C)
1.6
2.0
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 150°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C)
Gate-Emitter Leakage Current (V
GE
=
±20V,
V
CE
= 0V)
O
B
I
CES
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 150°C)
µA
nA
052-6223 Rev -
I
GES
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
APT Website - http://www.advancedpower.com
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT60GT60BR
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
I
C
= I
C2
MIN
TYP
MAX
UNIT
3200
310
pF
Gate-Emitter Charge
JE
SP CT
IV
EC E
IF T
IC EC
AT H
IO NI
C
N A
V
CC
= 0.5V
CES
L
280
120
20
14
55
nC
ns
180
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Resistive Switching (25
°
C)
V
GE
= 15V
I
C
= I
C2
V
CC
= 0.8V
CES
R
G
= 10Ω
Turn-off Delay Time
Fall Time
190
140
25
75
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Inductive Switching (150
°
C)
V
CLAMP
(Peak) = 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10Ω
ns
300
95
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
1.9
2.4
4.3
25
75
T
J
= +150°C
mJ
Inductive Switching (25
°
C)
V
CLAMP
(Peak) = 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10Ω
ns
Turn-off Delay Time
Fall Time
260
90
B
Total Switching Losses
T
J
= +25°C
3.8
mJ
S
THERMAL CHARACTERISTICS
Symbol
R
ΘJC
R
ΘJA
Torque
1
2
3
O
Forward Transconductance
V
CE
= 20V, I
C
= I
C2
6
Characteristic
Junction to Case
Junction to Ambient
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
MIN
TYP
MAX
UNIT
°C/W
lb•in
0.25
40
10
Repetitive Rating: Pulse width limited by maximum junction temperature.
I
C
= I
C2
, V
CC
= 50V, R
GE
= 25
Ω
, L = 100µH, T
j
= 25°C
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6223 Rev -
stm32/stm8
京公网安备 11010802033920号
EEWORLD
