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KGT12N120NDH

Description
High speed switching
File Size1MB,5 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet View All

KGT12N120NDH Overview

High speed switching

SEMICONDUCTOR
TECHNICAL DATA
General Description
KEC NPT IGBTs offer low switching losses, high energy efficiency
and high avalanche ruggedness for soft switching application such as
IH(induction heating), microwave oven, etc.
FEATURES
・High
speed switching
・High
system efficiency
・Soft
current turn-off waveforms
・Extremely
enhanced avalanche capability
KGT12N120NDH
MAXIMUM RATING
(Ta=25℃)
CHARACTERISTIC
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current @T
C
=100℃
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
@T
C
=25℃
@T
C
=100℃
@T
C
=25℃
@T
C
=100℃
SYMBOL
V
CES
V
GES
I
C
I
CM
*
I
F
I
FM
P
D
T
j
T
stg
RATING
1200
±20
24
12
36
15
45
176
70
150
-55 to + 150
UNIT
V
V
A
A
A
A
A
W
W
E
C
G
*Repetitive rating : Pulse width limited by max. junction temperature
THERMAL CHARACTERISTIC
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
Thermal Resistance, Junction to Ambient
SYMBOL
R
t h JC
R
t h JC
R
t h JA
MAX.
0.92
2.8
40
UNIT
℃/W
℃/W
℃/W
2011. 8. 30
Revision No : 0
1/7
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