2SK1252 datasheet, PDF - EEWORLD Datasheet

2SK1252: DescriptionTRANSISTOR 3 A, 120 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-8H1A, 3 PIN, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size1MB，45 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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2SK1252 Overview

TRANSISTOR 3 A, 120 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-8H1A, 3 PIN, FET General Purpose Power

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	120 V
Maximum drain current (ID)	3 A
Maximum drain-source on-resistance	0.58 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	12 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

2004-3

PRODUCT GUIDE

Power MOSFETs

semiconductor

2004

http://www.semicon.toshiba.co.jp/eng

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