CREAT BY ART
MBRF10100D - MBRF10200D
10.0AMPS Isolated Schottky Barrier Rectifier
ITO-220AB
Pb
RoHS
COMPLIANCE
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High Surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guarding for overvoltage protection
High temperature soldering guaranteed: 260℃/
10 seconds, 0.25"(6.35mm) from case
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Case: ITO-220AB molded plastic body
Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in-lbs. Max.
Weight: 1.74 grams
Dimensions in inches and (millimeters)
Marking Diagram
MBRF10XXD
G
Y
WW
= Specific Device Code
= Green compound
= Year
= Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking voltage
Maximum Average Forward Rectified Current
@Tc = 133℃(Total Device)
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Peak Repetitive Reverse Surge Current
Maximum Instantaneous Forward Voltage at (Note 1)
IF = 5A, T
A
=25℃
IF = 5A, T
A
=125℃
IF = 10A, T
A
=25℃
IF = 10A, T
A
=125℃
Maximum Reverse Current at Rated DC Blocking Voltage
T
A
=25
℃
T
A
=125
℃
Voltage rate of change (Rated V
R
)
Maximum Thermal Resistance Per Leg (Note 2)
Operating Temperature Range
Storage Temperature Range
Note1: Pulse Test : 300us Pulse Width, 1% Duty cycle
Note2: Thermal Resistance from Junction to Case Per Leg
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
RRM
MBRF
10100D
100
70
100
MBRF
10150D
150
105
150
10
120
0.5
MBRF
10200D
200
140
200
Unit
V
V
V
A
A
A
V
F
0.85
0.75
0.95
0.85
0.88
0.78
0.98
0.88
V
I
R
dV/dt
R
θJC
T
J
T
STG
0.1
5
10,000
3.5
-65 to + 150
-65 to + 150
mA
mA
V/uS
O
C/W
O
O
C
C
Version:A11
RATINGS AND CHARACTERISTIC CURVES (MBRF10100D THRU MBRF10150D)
FIG.1 MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG. 2 MAXIMUM NON-REPETITIVE
FORWARD SURGE CURRENT PER LEG
12
AVERAGE FORWARD
CURRENT (A)
PEAK FORWARD SURGE
CURRENT(A)
180
150
120
90
60
30
0
1
10
NUMBER OF CYCLES AT 60 Hz
8.3ms Single Half Sine Wave
JEDEC Method
10
8
6
4
2
0
0
25
50
75
100
125
150
175
CASE TEMPERATURE (℃)
RESISTER OR
INDUCTIVE LOAD
100
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT
(A)
INSTANTANEOUS REVERSE CURRENT
(mA)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
10
1
0.1
TA=75℃
MBRF10100D
TA=125℃
10
1
MBRF10150D-
MBRF10200D
0.01
0.001
TA=25℃
0.1
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
FORWARD VOLTAGE (V)
0.0001
0
20
40
PERCENT OF VR (%)
60
80
100
120
140
FIG. 5 TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE (pF)
TA=25℃
f=1.0MHz
Vsig=50mVp-p
FIG. 6 TYPICAL TRANSIENT THERMAL
IMPEDANCE PER LEG
100
100
TRANSIENT THERMAL
IMPEDANCE
(
℃
/ W)
10
1
10
0.1
1
10
100
REVERSE VOLTAGE (V)
0.1
0.01
0.1
1
T-PULSE DURATION(s)
10
100
Version:A11
Analog electronics
京公网安备 11010802033920号
EEWORLD
