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BZT52C6V8K

Description
200mW,Surface Mount Zener Diode
CategoryDiscrete semiconductor    diode   
File Size278KB,3 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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BZT52C6V8K Overview

200mW,Surface Mount Zener Diode

BZT52C6V8K Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionR-PDSO-F2
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation0.2 W
Nominal reference voltage6.8 V
surface mountYES
technologyZENER
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formFLAT
Terminal locationDUAL
Maximum voltage tolerance2%
Working test current5 mA
BZT52C2V4K~BZT52C75K
200mW,Surface Mount Zener Diode
Small Signal Diode
SOD-523F
B
Features
Wide zener voltage range selection : 2.4V to 75V
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version,RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
C
A
D
E
F
Unit (mm)
Min
0.70
1.50
0.25
1.10
0.60
0.10
Max
0.90
1.70
0.40
1.30
0.70
0.14
Unit (inch)
Min
Max
0.028 0.035
0.059 0.067
0.010 0.016
0.043 0.051
0.024 0.028
0.004 0.006
Mechanical Data
Case :SOD-523F small outline plastic package
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed:260°C/10s
Polarity : Indicated by cathode band
Weight :1.68±0.5 mg
Dimensions
A
B
C
D
E
F
Ordering Information
Part No.
Package code Package
Packing
BZT52C2V4K~75K
RK
SOD-523F 3K / 7" Reel
BZT52C2V4K~75K
RKG
SOD-523F 3K / 7" Reel
Pin Configutation
Suggested PAD Layout
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Forward Voltage
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
I
F
=10mA
(Note 1)
Symbol
P
D
V
F
RθJA
T
J
, T
STG
Value
200
1
625
-55 to + 150
Units
mW
V
°C/W
°C
Notes:1. Valid provided that electrodes are kept at ambient temperature
Zener I vs. V Characteristics
Current
I
F
V
ZM
V
Z
V
BR
V
R
I
R
I
ZK
V
F
Voltage
V
BR
I
ZK
Z
ZK
I
ZT
V
Z
Z
ZT
Forward Region
: Voltage at I
ZK
: Test current for voltage V
BR
: Dynamic impedance at I
ZK
: Test current for voltage V
Z
: Voltage at current I
ZT
: Dynamic impedance at I
ZT
: Maximum steady state current
: Voltage at I
ZM
I
ZT
I
ZM
BreakdownRegion
Leakage Region
I
ZM
V
ZM
Version : A11

BZT52C6V8K Related Products

BZT52C6V8K BZT52C4V3K BZT52C4V7K BZT52C6V2K
Description 200mW,Surface Mount Zener Diode 200mW,Surface Mount Zener Diode 200mW,Surface Mount Zener Diode 200mW,Surface Mount Zener Diode
package instruction R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2
Reach Compliance Code compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type ZENER DIODE ZENER DIODE ZENER DIODE ZENER DIODE
JESD-30 code R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2
JESD-609 code e3 e3 e3 e3
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
polarity UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
Maximum power dissipation 0.2 W 0.2 W 0.2 W 0.2 W
Nominal reference voltage 6.8 V 4.3 V 4.7 V 6.2 V
surface mount YES YES YES YES
technology ZENER ZENER ZENER ZENER
Terminal surface MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL Matte Tin (Sn) - with Nickel (Ni) barrie
Terminal form FLAT FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL DUAL
Maximum voltage tolerance 2% 2% 2% 2%
Working test current 5 mA 5 mA 5 mA 5 mA
Maker Taiwan Semiconductor - Taiwan Semiconductor Taiwan Semiconductor

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