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AQ1F3P

Description
on-chip resistor NPN silicon epitaxial transistor
File Size83KB,6 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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AQ1F3P Overview

on-chip resistor NPN silicon epitaxial transistor

DATA SHEET
COMPOUND TRANSISTOR
AQ1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
PACKAGE DRAWING (UNIT: mm)
FEATURES
• High current drives such as IC and motor solenoid available up
to 2 A
• On-chip bias resistor
• Low power consumption during drive
AQ1 SERIES LISTS
Products
AQ1L2N
AQ1A3M
AQ1F3M
AQ1F3P
AQ1L2Q
AQ1F2Q
AQ1A4A
R
1
(KΩ)
0.47
1.0
2.2
2.2
0.47
0.22
R
2
(KΩ)
1.0
1.0
2.2
10
4.7
2.2
10
Electrode Connection
1. Emitter
EIAJ : SC-43B
2. Collector JEDEC: TO-92
3. Base
IEC
: PA33
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
T
j
T
stg
Ratings
−20
−20
−10
−2.0
−3.0
−0.04
750
150
−55
to +150
Unit
V
V
V
A
A
A
mW
°C
°C
* PW
10 ms, duty cycle
50 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D10840EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998

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