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SIR-563ST3F_07

Description
Infrared light emitting diode, top view type
File Size64KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet View All

SIR-563ST3F_07 Overview

Infrared light emitting diode, top view type

SIR-563ST3F
Sensors
Infrared light emitting diode, top view type
SIR-563ST3F
The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous
efficiency and a 940nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for
compact optical control equipment.
Applications
Optical control equipment
Light source for remote control devices
Dimensions
(Unit : mm)
φ5.0±0.2
Notes:
1.
Unspecified tolerance
shall be
±0.2.
2. Dimension in parenthesis are
show for reference.
Features
1) High efficiency, high output P
O
=11.0mW
(I
F
=50mA).
2) Wide radiation angle
θ1/2=15deg.
3) Emission spectrum well suited to silicon detectors.
(λP=940nm).
4) Good current-optical output linearity.
5) Long life, high reliability.
4−0.6
2
1
(2.5)
φ6±0.3
2.5±1
Min.24
2−
0.5
Max.1
1
8.7±0.3
1 Anode
2 Cathode
Absolute maximum ratings
(Ta = 25°C)
Parameter
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
Pulse width=0.1msec, duty ratio 1%
Symbol
I
F
V
R
P
D
I
FP
Topr
Tstg
Limits
100
5.0
160
0.5
−25
to
+85
−40
to
+85
Unit
mA
V
mW
A
°C
°C
Rev.A
1/3
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