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RF601B2D_11

Description
Fast recovery diodes
File Size1MB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet View All

RF601B2D_11 Overview

Fast recovery diodes

Data Sheet
Fast recovery diodes
RF601B2D
Applications
General rectification
Dimensions
(Unit : mm)
Land
size figure
(Unit : mm)
6.0
3)Very fast recovery
4)Low switching loss
Construction
Silicon epitaxial planer
Structure
CPD
2.3 2.3
Structure
(2)
(1)
(3)
Taping dimensions
(Unit : mm)
Absolute
maximum ratings
(Ta=25C)
Parameter
Limits
Symbol
Reverse voltage (repetitive peak)
200
V
RM
Reverse voltage (DC)
200
V
R
Average rectified forward current (*1)
6
Io
Forward current surge peak (60Hz/1cyc)
40
I
FSM
Junction temperature
150
Tj
Storage temperature
55
to
150
Tstg
(*1) Business frequencies, Rating of R-load, Tc=128C, 1/2 Io per diode
Electrical
characteristic
(Ta=25°C)
Parameter
Symbol
V
F
Forward voltage
Reverse current
Reverse recovery time
Thermal impedance
I
R
trr
jc
Unit
V
V
A
A
C
C
Min.
-
-
-
-
Typ.
0.87
0.01
14
-
Max.
0.93
10
25
6
Unit
V
A
ns
C/W
Conditions
I
F
=3A
V
R
=200V
I
F
=0.5A,I
R
=1A,Irr=0.25*I
R
JUNCTION TO CASE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.05 - Rev.F
3.0
Features
1)Power mold type.(CPD)
2)Ultra Low V
F
2.0
1.6
1.6
6.0
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