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RFUS20TM6S_11

Description
20 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size425KB,6 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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RFUS20TM6S_11 Overview

20 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB

Data Sheet
Super Fast Recovery Diode
RFUS20TM6S
Series
Ultra Fast Recovery
Dimensions(Unit
: mm)
+0.3
-0.1
+0.3
-0.1
+0.2
-0.1
Structure
Features
1)Cathode Common Single type.(TO-220)
2)Ultra High switching speed
Construction
Silicon epitaxial planar
ot
Absolute
maximum ratings
(Tc=25C)
Parameter
Symbol
Repetitive peak reverse voltage
V
RM
Reverse voltage
V
R
Average rectified forward current
Io
ec
N
ew om
m
D
es en
ig de
ns d
f
+0.4
-0.2
Applications
General rectification
(1)
(2) (3)
+0.1
-0.05
R
Conditions
Duty≦0.5
Direct voltage
60Hz half sin wave, Resistance load,
Forward current surge peak
Junction temperature
Storage temperature
I
FSM
Tj
Tstg
Tc=50C
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
N
Electrical
characteristics(Tj=25C)
Parameter
Symbol
V
F
Forward voltage
Reverse current
I
R
Reverse recovery time
trr
Thermal Resistance
Rth(j-c)
Conditions
I
F
=20A
V
R
=600V
I
F
=0.5A,I
R
=1A,Irr=0.25×I
R
junction to case
Min.
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
or
(1)
(2)
(3)
Limits
600
600
20
Unit
V
V
A
A
°C
°C
100
150
55
to
150
Typ.
2.3
0.05
23
Max.
2.8
10
35
1.8
Unit
V
μA
ns
C
/ W
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