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MP6Z11

Description
Midium Power Transistors (±30V / ±1A)
File Size1MB,8 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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MP6Z11 Overview

Midium Power Transistors (±30V / ±1A)

Data Sheet
Midium Power Transistors (±30V /
±1A)
MP6Z11
Structure
NPN/PNP Silicon epitaxial planar transistor
Features
Low saturation voltage, typically
V
CE (sat)
= 0.35V (Max.) (I
C
/ I
B
= 500mA / 25mA)
V
CE (sat)
= -0.35V (Max.) (I
C
/ I
B
= -500mA / -25mA)
Dimensions
(Unit : mm)
MPT6
(Dual)
(6)
(5)
(4)
Applications
Low Frequency Amplifier
Driver
Packaging specifications
Type
Package
MPT6
Code
TR
Basic ordering unit (pieces) 1000
(1) Tr.1
(2) Tr.1
(3) Tr.2
(4) Tr.2
(5) Tr.2
(6) Tr.1
Emitter
Base
Collector
Emitter
Base
Collector
(1)
(2)
(3)
Inner circuit
(Unit : mm)
(6)
(5)
(4)
Tr.2
Absolute maximum ratings
(Ta = 25C)
 <Tr.1>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*1
Limits
30
30
6
1
2
Unit
V
V
V
A
A
(1) Tr.1
(2) Tr.1
(3) Tr.2
(4) Tr.2
(5) Tr.2
(6) Tr.1
Emitter
Base
Collector
Emitter
Base
Collector
Tr.1
(1)
(2)
(3)
 <Tr.2>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*1
Limits
-30
-30
-6
-1
-2
Unit
V
V
V
A
A
 <Tr.1
and Tr.2>
Parameter
Power dissipation
Junction temperature
Range of storage temperature
*1 Pw=10ms, Single Pulse
*2 Mounted on a 40 x 40 x 0.7[mm] ceramic board.
Symbol
P
D
*2
Limits
2.0
1.4
Unit
W/Total
W/Element
C
C
P
D
*2
T
j
150
T
stg
-55 to 150
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
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