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2SB1140-S

Description
PNP Plastic-Encapsulate Transistors
File Size108KB,2 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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2SB1140-S Overview

PNP Plastic-Encapsulate Transistors

MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
2SB1140-R
2SB1140-S
Features
Power dissipation: P
CM
= 0.5W(T
amb
=25 )
Collector current: I
CM
= -2A
Collector-base voltage: V
(BR)CBO
= -50V
Operating and storage junction temperature range
T
J
, T
stg
: -55 to + 150
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
PNP
Plastic-Encapsulate
Transistors
SOT-89
A
B
K
Electrical Characteristics @ 25
Symbol
V
CEO
V
CBO
V
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
Cob
Unless Otherwise Specified
Min
-50
-50
-5.0
---
---
120
60
---
---
---
---
Typ
---
---
---
---
---
---
---
---
---
80
---
Max
---
---
---
-1.0
-1.0
340
---
-0.3
-1.2
---
80
Unit
V
V
C
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=-1000­A, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=-10­A, I
E
=0)
Emitter-Base Voltage
(I
E
=-10­A, I
C
=0)
Collector Cut-off Current
(V
CB
=-50V, I
E
=0)
Emitter Cut-off Current
(V
EB
=-5V, I
C
=0)
DC Current Gain
(V
CE
=-2V, I
C
=-0.2A)
DC Current Gain
(V
CE
=-2V, I
C
=-1A)
Collector-Emitter Saturation Voltage
(I
C
=-1A, I
B
=-50mA)
Base-Emitter Saturation Voltage
(I
C
=-1A, I
B
=-50mA)
Transition Frequency
(V
CE
=-10Vdc, I
C
=50mAdc, f=200MHz)
Collector output capacitance
(V
CB
=-10V, I
E
=0, f=1MHz)
E
V
­A
­A
---
---
V
V
MHz
PF
1
2
3
D
G
F
H
J
1.BASE
2.COLLECTOR
3.EMITTER
CLASSIFICATION OF h
FE
Rank
Range
Marking
R
120-240
1L
S
170-340












 


 

 











25










































www.mccsemi.com
Revision:
5
1 of 2
2009/12/08

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