2SB1140-R datasheet, PDF - EEWORLD Datasheet

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2SB1140-R: DescriptionPNP Plastic-Encapsulate Transistors; File Size108KB，2 Pages; ManufacturerMCC; Websitehttp://www.mccsemi.com

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2SB1140-R Overview

PNP Plastic-Encapsulate Transistors

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MCC

TM

Micro Commercial Components

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

2SB1140-R

2SB1140-S

•

Features

Power dissipation: P

CM

= 0.5W(T

amb

=25 )

Collector current: I

CM

= -2A

Collector-base voltage: V

(BR)CBO

= -50V

Operating and storage junction temperature range

T

J

, T

stg

: -55 to + 150

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0 and MSL Rating 1

PNP

Plastic-Encapsulate

Transistors

SOT-89

A

B

K

Electrical Characteristics @ 25

Symbol

V

CEO

V

CBO

V

EBO

I

CBO

I

EBO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

Cob

Unless Otherwise Specified

Min

-50

-5.0

---

120

60

---

Typ

---

80

---

Max

---

-1.0

340

---

-0.3

-1.2

---

80

Unit

V

C

Parameter

Collector-Emitter Breakdown Voltage

(I

C

=-1000A, I

B

=0)

Collector-Base Breakdown Voltage

(I

C

=-10A, I

E

=0)

Emitter-Base Voltage

(I

E

=-10A, I

C

=0)

Collector Cut-off Current

(V

CB

=-50V, I

E

=0)

Emitter Cut-off Current

(V

EB

=-5V, I

C

=0)

DC Current Gain

(V

CE

=-2V, I

C

=-0.2A)

DC Current Gain

(V

CE

=-2V, I

C

=-1A)

Collector-Emitter Saturation Voltage

(I

C

=-1A, I

B

=-50mA)

Base-Emitter Saturation Voltage

(I

C

=-1A, I

B

=-50mA)

Transition Frequency

(V

CE

=-10Vdc, I

C

=50mAdc, f=200MHz)

Collector output capacitance

(V

CB

=-10V, I

E

=0, f=1MHz)

E

V

A

---

V

MHz

PF

1

2

3

D

G

F

H

J

1.BASE

2.COLLECTOR

3.EMITTER

CLASSIFICATION OF h

FE

Rank

Range

Marking

R

120-240

1L

S

170-340

25

www.mccsemi.com

Revision:

5

1 of 2

2009/12/08

2SB1140-R Related Products

	2SB1140-R	2SB1140-S
Description	PNP Plastic-Encapsulate Transistors	PNP Plastic-Encapsulate Transistors

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