AP85T10GR-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower On-resistance
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
100V
8mΩ
125A
Description
AP85T10 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-262 package is widely preferred for all commercial-
industrial through hole applications. The low thermal resistance and
low package cost contribute to the worldwide popular package.
G
D
S
TO-262(R)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
3
Rating
100
+20
125
120
88
300
300
2.42
-55 to 175
-55 to 175
Units
V
V
A
A
A
A
W
W
℃
℃
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
0.5
62
Units
℃/W
℃/W
1
201210291
Data and specifications subject to change without notice
AP85T10GR-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Symbol
V
SD
t
rr
Q
rr
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
o
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=40A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=40A
V
DS
=80V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=40A
V
DS
=80V
V
GS
=10V
V
DS
=50V
I
D
=40A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Test Conditions
I
S
=40A, V
GS
=0V
I
S
=10A, V
GS
=0V
dI/dt=100A/µs
Min.
100
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
Typ.
-
-
-
75
-
-
100
24
45
23
95
47
78
770
280
1.2
Typ.
-
85
290
Max. Units
-
8
5
-
25
+100
160
-
-
-
-
-
-
-
-
2.4
V
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Parameter
Forward On Voltage
2
4670 7470
Source-Drain Diode
Max. Units
1.3
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 120A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP85T10GR-HF
300
160
T
C
= 25 C
250
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
200
10V
9.0V
8.0V
7.0V
T
C
= 1 75
o
C
120
10V
9.0V
8.0V
7.0V
V
G
= 6.0V
150
80
V
G
= 6.0V
100
40
50
0
0
4
8
12
16
20
24
0
0
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.4
I
D
=40A
V
G
=10V
2.0
Normalized BV
DSS
(V)
1.1
Normalized R
DS(ON)
1.6
1
1.2
0.9
0.8
0.8
-50
0
50
100
150
200
0.4
-50
0
50
100
150
200
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C)
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
40
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.2
30
Normalized V
GS(th)
T
j
=175
o
C
I
S
(A)
T
j
=25
o
C
1
20
0.8
10
0.6
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.4
-50
0
50
100
150
200
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP85T10GR-HF
12
8000
f=1.0MHz
I
D
= 40 A
10
V
GS
, Gate to Source Voltage (V)
C (pF)
8
V
DS
= 50 V
V
DS
= 60 V
V
DS
= 80 V
6000
C
iss
4000
6
4
2000
2
0
0
20
40
60
80
100
120
0
1
5
9
13
17
21
25
C
oss
C
rss
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
Operation in this
area limited by
R
DS(ON)
100
I
D
(A)
100us
0.2
0.1
0.1
0.05
1ms
10
10ms
100ms
DC
P
DM
0.02
0.01
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
T
c
=25
o
C
Single Pulse
1
0.1
1
10
100
Single Pulse
0.01
1000
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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