Datasheet
Serial EEPROM Series Standard EEPROM
SPI BUS EEPROM
BR25Sxxx-W Series
(32K 64K 128K 256K)
●General
Description
BR25Sxxx-W series is a serial EEPROM of SPI BUS interface method
●Features
High speed clock action up to 20MHz (Max.)
Wait function by HOLDB terminal
Part or whole of memory arrays settable as read only
memory area by program
1.7V to 5.5V single power source action most suitable
for battery use
Page write mode useful for initial value write at
factory shipment
Highly reliable connection by Au pad and Au wire
For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1)
Auto erase and auto end function at data rewrite
Low current consumption
At write action (5V)
: 1.5mA (Typ.)
At read action (5V)
: 1.0mA (Typ.)
At standby action (5V) : 0.1μA (Typ.)
Address auto increment function at read action
Write mistake prevention function
Write prohibition at power on
Write prohibition by command code (WRDI)
Write prohibition by WP pin
Write prohibition block setting by status registers
(BP1, BP0)
Write mistake prevention function at low voltage
Data kept for 40 years
Data rewrite up to 1,000,000 times
Data at shipment
Memory array: FFh
Status register: WPEN, BP1, BP0 : 0
●Packages
W(Typ.) x D(Typ.) x H(Max.)
SOP8
5.00mm x 6.20mm x 1.71mm
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
SOP- J8
4.90mm x 6.00mm x 1.65mm
TSSOP-B8J
3.00mm x 4.90mm x 1.10mm
SSOP-B8
3.00mm x 6.40mm x 1.35mm
MSOP8
2.90mm x 4.00mm x 0.90mm
VSON008X2030
2.00mm x 3.00mm x 0.60mm
●Page
write
Page
Part Number
●BR25Sxxx-W
Series
Capacity Bit format
32Kbit
64Kbit
128Kbit
256Kbit
4K×8
8K×8
16K×8
32K×8
32Byte
BR25S320-W
BR25S640-W
64Byte
BR25S128-W
BR25S256-W
Power source
voltage
1.7V to 5.5V
1.7V to 5.5V
1.7V to 5.5V
1.7V to 5.5V
SOP8
●
●
●
●
SOP-J8
●
●
●
●
SSOP-B8 TSSOP-B8 MSOP8
●
●
●
●
●
●
●
●
TSSOP-B8J
●
●
VSON008
X2030
●
○Product
structure：Silicon monolithic integrated circuit
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½14½001
○This
product is not designed protection against radioactive rays
1/31
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
BR25Sxxx-W Series (32K 64K 128K 256K)
●Absolute
Maximum Ratings
(Ta=25℃)
Parameter
Symbol
Ratings
Supply Voltage
V
CC
-0.3 to +6.5
450 (SOP8)
450 (SOP-J8)
300 (SSOP-B8)
Power Dissipation
Pd
330 (TSSOP-B8)
310 (TSSOP-B8J)
310 (MSOP8)
300 (VSON008X2030)
Storage Temperature
Tstg
－65
to +125
Operating Temperature
Topr
－40
to +85
Terminal Voltage
‐
-0.3 to Vcc+0.3
●Memory
cell characteristics (Ta=25°C , Vcc=1.7V to 5.5V)
Limits
Parameter
Min.
Typ.
Number of data rewrite times *1
1,000,000
-
Data hold years *1
40
-
*1 Not 100% TESTED
Datasheet
Unit
V
When using at Ta=25℃
When using at Ta=25℃
When using at Ta=25℃
When using at Ta=25℃
When using at Ta=25℃
When using at Ta=25℃
When using at Ta=25℃
Remarks
or higher 4.5mW to be reduced per 1℃.
or higher 4.5mW to be reduced per 1℃.
or higher 3.0mW to be reduced per 1℃.
or higher 3.3mW to be reduced per 1℃.
or higher 3.1mW to be reduced per 1℃.
or higher 3.1mW to be reduced per 1℃.
or higher 3.0mW to be reduced per 1℃.
mW
℃
℃
V
Max.
-
-
Unit
Times
Years
●Recommended
Operating Ratings
Parameter
Symbol
Power source voltage
Vcc
Input voltage
V
IN
Ratings
1.7 to 5.5
0 to Vcc
Unit
V
●Input
/ output capacity
(Ta=25°C, frequency=5MHz)
Parameter
Symbol
Min.
Input capacity *1
C
IN
－
Output capacity *1
C
OUT
－
*1
Not 100% TESTED.
Max.
8
8
Unit
pF
V
IN
=GND
V
OUT
=GND
Conditions
●Electrical
characteristics
(Unless otherwise specified, Ta=-40°C to +85°C, Vcc=1.7V to 5.5V)
Limits
Parameter
Symbol
Unit
Conditions
Min.
Typ.
Max.
“H” Input Voltage1
VIH1
0.7xVcc
－
Vcc+0.3
V 1.7≦Vcc≦5.5V
“L” Input Voltage1
VIL1
-0.3
－
0.3xVcc
V 1.7≦Vcc≦5.5V
“L” Output Voltage1
VOL1
0
－
0.4
V IOL=2.1mA, 2.5≦Vcc<5.5V
“L” Output Voltage2
VOL2
0
－
0.2
V IOL=1.0mA, 1.7≦Vcc<2.5V
“H” Output Voltage1
VOH1 Vcc-0.2
－
Vcc
V IOH=-0.4mA, 2.5V≦Vcc<5.5V
“H” Output Voltage2
VOH2 Vcc-0.2
－
Vcc
V IOH=-100µA, 1.7≦Vcc<2.5V
Input Leakage Current
ILI
-1
－
1
μA
V
IN
=0 to Vcc
Output Leakage Current
ILO
-1
－
1
μA
V
OUT
=0 to Vcc, CSB=Vcc
0.5
*1
Vcc=1.8V, fSCK=5MHz, tE/W=5ms
ICC1
－
－
*2
mA
Byte Write, Page Write, Write Status register
1
*1
1
Vcc=2.5V, fSCK=10MHz, tE/W=5ms
Operating Current Write
ICC2
－
－
*2
mA
Byte Write, Page Write, Write Status register
1.5
*1
2
Vcc=5.5V, fSCK=20MHz, tE/W=5ms
ICC3
－
－
*2
mA
Byte Write, Page Write, Write Status register
3
Vcc=1.8V, fSCK=5MHz, SO=OPEN
ICC4
－
－
1
mA
Read, Read Status Register
Vcc=2.5V, fSCK=2MHz, SO=OPEN
ICC5
－
－
1
mA
Read, Read Status Register
Vcc=2.5V, fSCK=5MHz, SO=OPEN
ICC6
－
－
1.5
mA
Read, Read Status Register
Vcc=2.5V, fSCK=10MHz, SO=OPEN
Operating Current Read
ICC7
－
－
2
mA
Read, Read Status Register
Vcc=5.5V, fSCK=5MHz, SO=OPEN
ICC8
－
－
2
mA
Read, Read Status Register
Vcc=5.5V, fSCK=10MHz, SO=OPEN
ICC9
－
－
4
mA
Read, Read Status Register
Vcc=5.5V, fSCK=20MHz, SO=OPEN
ICC10
－
－
8
mA
Read, Read Status Register
Vcc=5.5V, SO=OPEN
－
－
Standby Current
ISB
2
μA
CSB=HOLDB=WP=Vcc, SCK=SI=Vcc or GND
*1 BR25S320/640-W
*2 BR25S128/256-W
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©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½15½001
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TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
BR25Sxxx-W Series (32K 64K 128K 256K)
Datasheet
●Operating
timing characteristics (Ta=-40°C to +85°C, unless otherwise specified, load capacity C
L
=30pF)
1.7≦Vcc<2.5V 1.8≦Vcc<2.5V 2.5≦Vcc<4.5V 4.5≦Vcc<5.5V
Symbol
Unit
Parameter
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
f
SCK
-
-
3
-
-
5
-
-
10
-
-
20 MHz
SCK frequency
t
SCKWH
125
-
-
80
-
-
40
-
-
20
-
-
ns
SCK high time
t
SCKWL
125
-
-
80
-
-
40
-
-
20
-
-
ns
SCK low time
t
CS
250
-
-
90
-
-
40
-
-
20
-
-
ns
CSB high time
t
CSS
100
-
-
60
-
-
30
-
-
15
-
-
ns
CSB setup time
t
CSH
100
-
-
60
-
-
30
-
-
15
-
-
ns
CSB hold time
t
SCKS
100
-
-
50
-
-
20
-
-
15
-
-
ns
SCK setup time
t
SCKH
100
-
-
50
-
-
20
-
-
15
-
-
ns
SCK hold time
t
DIS
30
-
-
20
-
-
10
-
-
5
-
-
ns
SI setup time
50
-
-
20
-
-
10
-
-
5
-
-
ns
t
DIH
SI hold time
-
-
125
-
-
80
-
-
40
-
-
20
ns
t
PD
Data output delay time
t
OH
0
-
-
0
-
-
0
-
-
0
-
-
ns
Output hold time
t
OZ
-
-
200
-
-
80
-
-
40
-
-
20
ns
Output disable time
t
HFS
100
-
-
0
-
-
0
-
-
0
-
-
ns
HOLDB setting setup time
100
-
-
20
-
-
10
-
-
5
-
-
ns
t
HFH
HOLDB setting hold time
t
HRS
100
-
-
0
-
-
0
-
-
0
-
-
ns
HOLDB release setup time
t
HRH
100
-
-
20
-
-
10
-
-
5
-
-
ns
HOLDB release hold time
t
HOZ
-
-
100
-
-
80
-
-
40
-
-
20
ns
Time from HOLDB to output High-Z
-
-
100
-
-
80
-
-
40
-
-
20
ns
t
HPD
Time from HOLDB to output change
*1
t
RC
-
-
1
-
-
1
-
-
1
-
-
1
μs
SCK rise time
*1
t
FC
-
-
1
-
-
1
-
-
1
-
-
1
μs
SCK fall time
*1
t
RO
-
-
100
-
-
50
-
-
40
-
-
20
ns
OUTPUT rise time
*1
t
FO
-
-
100
-
-
50
-
-
40
-
-
20
ns
OUTPUT fall time
Write time
t
E/W
-
-
5
-
-
5
-
-
5
-
-
5
ms
*1 NOT 100% TESTED
●AC
timing characteristics conditions
Parameter
Load capacity
Input rise time
Input fall time
Input voltage
Input / Output judgment voltage
Symbol
C
L
-
-
-
-
Limits
Min.
-
-
-
Typ.
-
-
-
0.2Vcc/0.8Vcc
0.3Vcc/0.7Vcc
Max.
30
50
50
Unit
pF
ns
ns
V
V
●Sync
data input / output timing
tCS
tCSS
tCS
CSB
tSCKS
tSCKWL
tSCKWH
tRC
tFC
CSB
SCK
tCSH tSCKH
SCK
tDIS tDIH
SI
SI
SO
High-Z
tPD
tOH
tRO,tFO
tOZ
High-Z
SO
Figure 1. Input timing
SI is taken into IC inside in sync with data rise edge of
SCK. Input address and data from the most significant bit
MSB
"H"
Figure 2. Input / Output timing
SO is output in sync with data fall edge of SCK. Data is
output from the most significant bit MSB.
CSB
"L"
tHFS
tHFH
tHRS tHRH
SCK
tDIS
SI
n+1
tHOZ
tHPD
High-Z
Dn+1
Dn
n
n-1
SO
Dn
Dn-1
HOLDB
Figure 3. HOLD timing
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TSZ22111½15½001
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TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
BR25Sxxx-W Series (32K 64K 128K 256K)
●Block
Diagram
Datasheet
CSB
1
INSTRUCTION DECODE
CONTROL CLOCK
GENERATION
WRITE
VOLTAGE
DETECTION
8 Vcc
HIGH VOLTAGE
GENERATOR
SO
2
INSTRUCTION
REGISTER
INHIBITION
7 HOLDB
STATUS REGISTER
WP
3
ADDRESS
REGISTER
DATA
12 to 15bit
*
1
ADDRESS
DECODER
READ/WRITE
AMP
12 to 15bit
*
1
6 SCK
32to256K
EEPROM
GND
4
REGISTER
8bit
8bit
5 SI
*1 12bit: BR25S320-W
13bit: BR25S640-W
14bit: BR25S128-W
15bit: BR25S256-W
●Pin
Configuration
Vcc
(TOP VIEW)
HOLDB SCK
SI
BR25S320-W
BR25S640-W
BR25S128
-W
BR25S256-W
CSB
SO
WP
GND
●Pin
Descriptions
Terminal
name
Vcc
GND
CSB
SCK
SI
SO
HOLDB
Input
/Output
-
-
Input
Input
Input
Output
Input
Function
Power source to be connected
All input / output reference voltage, 0V
Chip select input
Serial clock input
Start bit, ope code, address, and serial data input
Serial data output
Hold input
Command communications may be suspended
temporarily (HOLD status)
Write protect input
Write command is prohibited
Write status register command is prohibited
WP
Input
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©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½15½001
4/31
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
BR25Sxxx-W Series (32K 64K 128K 256K)
●Typical
Performance Curves
(The following characteristic data are Typ. Values.)
Datasheet
Figure 4. "H" Input Voltage VIH
(CSB,SCK,SI,HOLDB,WP)
Figure 5. "L" Input Voltage VIL
(CSB,SCK,SI,HOLDB,WP)
Figure 6. "L" Output Voltage VOL1(Vcc=2.5V)
Figure 7. "H" Output Voltage VOH1
(Vcc=2.5V)
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©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½15½001
5/31
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
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