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1ZB13

Description
13V,1000mW,Zener Diodes, Diodes, Single, 10%(suffix\"A\" for 5%), 13V, 10mA, 1000mW, NO
CategoryDiscrete semiconductor   
File Size488KB,3 Pages
ManufacturerGalaxy Microelectronics
Environmental Compliance
Download Datasheet Parametric View All

1ZB13 Overview

13V,1000mW,Zener Diodes, Diodes, Single, 10%(suffix\"A\" for 5%), 13V, 10mA, 1000mW, NO

1ZB13 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Microelectronics
Parts packaging codeDO-41
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance30 Ω
Number of components1
Maximum operating temperature150 °C
Maximum power dissipation1 W
Nominal reference voltage13 V
surface mountNO
Maximum voltage tolerance10%
Working test current10 mA
category
Tolerance10%(suffix\"A\" for 5%)
VZ (V) nom.13
Condition1_IT (mA)10
PD (mW) max1000
AEC QualifiedNO
Maximum operating temperature150
Minimum operating temperature-55
Is it lead-free?no
Comply with ReachYES
RoHS compliantYES
Package OutlinesDO-41
BL
FEATURES
power rating.
GALAXY ELECTRICAL
ZENER DIODES
1ZB6.8 --- 1ZB390
POWER DISSIPATION:
1.0 W
Silicon planar power zener diodes
For use in stabilizing and clipping curcuits with high
DO - 41
Standard
zener
voltage tolerance is ±10%. Add
suffix "A" for ±5% tolerance. Other
zener
voltage
and tolerances are available upon request.
MECHANICAL DATA
Case:DO-41
Terminals: Solderable per MIL-STD-202,
method
208
Polarity: Cathode
band
Marking: Type
number
Approx. Weight:
0.34grams.
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
SYMBOL
Zener current (see
Table
"Characteristics")
VALUE
UNIT
Pow er dissipation at T
amb
=25
P
tot
T
J
T
s
1.0
1)
-40---+150
-40---+150
W
Junction temperature
Storage temperature
range
NOTES:
(1) Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.
www.galaxycn.com
Document Number 0284006
BL
GALAXY ELECTRICAL
1.

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