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2N7002HT

Description
, Diodes, Single, N, Y, 0.15W, 60W, ±20V
CategoryDiscrete semiconductor   
File Size599KB,6 Pages
ManufacturerGalaxy Microelectronics
Download Datasheet Parametric Compare View All

2N7002HT Overview

, Diodes, Single, N, Y, 0.15W, 60W, ±20V

2N7002HT Parametric

Parameter NameAttribute value
MakerGalaxy Microelectronics
package instruction,
Reach Compliance Codeunknown
category
ConfigurationSingle
Channel PolarityN
ESDY
Max PD(W)0.15
Min PD(W)60
Max VGS (V)±20
Max ID(A)0.3
Max IGSS(uA)±10
Max VGS(th) (V)2.5
RDS(on)(mΩ) @ 25℃ 10V Typ1450
RDS(on)(mΩ) @ 25℃ 10V Max2500
AEC QualifiedNO
Maximum operating temperature150
Minimum operating temperature-55
MSL level1
Is it lead-free?Yes
Comply with ReachYes
RoHS compliantYes
ECCN codeEAR99
Package OutlinesSOT-523
N-Channel Enhancement MosFET Transistor
2N7002H
Features
Low on-resistance.
ESD Protected Gate Up to 2KV HBM
High-speed switching.
Drive circuits can be simple.
Parallel use is easy.
2N7002H
SOT-23
2N7002HW
SOT-323
Pb
Lead-free
Typical Applications
N-channel enhancement mode effect transistor.
Switching application.
2N7002HT
2N7002HL
DFN1006-3
Mechanical Data
Case: SOT-23, SOT-323, SOT-523, DFN1006-3.
Molding Compound, UL Flammability Classification
Rating 94V-0.
Terminals: Matte Tin Plated Leads, Solderable Per
MIL-STD-202, Method 208.
SOT-523
Ordering Information
Part Number
2N7002H□
2N7002HW□
2N7002HT□
2N7002HL□
□:
none is for Lead Free package;
“G” is for Halogen Free package.
Package
SOT-23
SOT-323
SOT-523
DFN1006-3
Shipping
Marking Code
7002K
RKS
7002K
72
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
Maximum Ratings
(@T
A
=25℃ unless otherwise specified)
Parameter
Drain-Source Voltage
Gate -Source Voltage
Continuous Drain Current
Pulsed Drain Current
(NOTE4)
tp=10us
SOT-23
Power Dissipation
SOT-323
SOT-523
DFN1006-3
P
D
0.15
0.15
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
60
±20
300
2000
0.35
0.25
W
Units
V
V
mA
mA
MTM0015A
www.gmesemi.com
1

2N7002HT Related Products

2N7002HT 2N7002H 2N7002HL 2N7002HW
Description , Diodes, Single, N, Y, 0.15W, 60W, ±20V , Diodes, Single, N, Y, 0.35W, 60W, ±20V , Diodes, Single, N, Y, 0.15W, 60W, ±20V , Diodes, Single, N, Y, 0.25W, 60W, ±20V
Maker Galaxy Microelectronics Galaxy Microelectronics Galaxy Microelectronics Galaxy Microelectronics
Reach Compliance Code unknown unknown unknown unknown
Configuration Single Single Single Single
Channel Polarity N N N N
ESD Y Y Y Y
Max PD(W) 0.15 0.35 0.15 0.25
Min PD(W) 60 60 60 60
Max VGS (V) ±20 ±20 ±20 ±20
Max ID(A) 0.3 0.3 0.3 0.3
Max IGSS(uA) ±10 ±10 ±10 ±10
Max VGS(th) (V) 2.5 2.5 2.5 2.5
RDS(on)(mΩ) @ 25℃ 10V Typ 1450 1450 1450 1450
RDS(on)(mΩ) @ 25℃ 10V Max 2500 2500 2500 2500
AEC Qualified NO NO NO NO
Maximum operating temperature 150 150 150 150
Minimum operating temperature -55 -55 -55 -55
MSL level 1 1 3 1
Is it lead-free? Yes Yes Yes Yes
Comply with Reach Yes Yes Yes Yes
RoHS compliant Yes Yes Yes Yes
ECCN code EAR99 EAR99 EAR99 EAR99
Package Outlines SOT-523 SOT-23 DFN1006-3 SOT-323
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