N-Channel Enhancement MosFET Transistor
2N7002H
Features
Low on-resistance.
ESD Protected Gate Up to 2KV HBM
High-speed switching.
Drive circuits can be simple.
Parallel use is easy.
2N7002H
SOT-23
2N7002HW
SOT-323
Pb
Lead-free
Typical Applications
N-channel enhancement mode effect transistor.
Switching application.
2N7002HT
2N7002HL
DFN1006-3
Mechanical Data
Case: SOT-23, SOT-323, SOT-523, DFN1006-3.
Molding Compound, UL Flammability Classification
Rating 94V-0.
Terminals: Matte Tin Plated Leads, Solderable Per
MIL-STD-202, Method 208.
SOT-523
Ordering Information
Part Number
2N7002H□
2N7002HW□
2N7002HT□
2N7002HL□
□:
none is for Lead Free package;
“G” is for Halogen Free package.
Package
SOT-23
SOT-323
SOT-523
DFN1006-3
Shipping
Marking Code
7002K
RKS
7002K
72
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
Maximum Ratings
(@T
A
=25℃ unless otherwise specified)
Parameter
Drain-Source Voltage
Gate -Source Voltage
Continuous Drain Current
Pulsed Drain Current
(NOTE4)
tp=10us
SOT-23
Power Dissipation
SOT-323
SOT-523
DFN1006-3
P
D
0.15
0.15
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
60
±20
300
2000
0.35
0.25
W
Units
V
V
mA
mA
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N-Channel Enhancement MosFET Transistor
2N7002H
Thermal Characteristics
Parameter
SOT-23
Thermal Resistance Junction
to Ambient Air
SOT-323
SOT-523
DFN1006-3
Operating Junction Temperature Range
Storage Temperature Range
T
j
T
STG
R
θJA
833
833
150
-55 to +150
℃
℃
Symbol
Limits
357
500
℃/W
Unit
Electrical Characteristics
(@T
A
=25℃ unless otherwise specified)
Symbol
OFF Characteristics
V
DSS
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Drain to Source Leakage Current
Gate-body Leakage
V
GS
=0V,I
D
=250μA
V
DS
=60V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
60
-
-
-
-
-
-
1
±10
V
uA
uA
Parameter
Test conditions
MIN
TYP
MAX
UNIT
ON Characteristics
(NOTE2)
R
DS(ON)
V
GS(TH)
Static Drain-Source On-resistance
Gate Threshold Voltage
V
GS
=5V, I
D
=0.05A
V
GS
=10V, I
D
=0.5A
V
DS
= V
GS
, I
D
=250uA
-
-
1
1.5
1.45
1.5
3
2.5
2.5
Ω
V
Dynamic Characteristics
(NOTE3)
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 20V
f = 1.0MHz
-
-
-
41
15
4
-
pF
Switching Characteristics
(NOTE3)
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
=30V,I
D
=0.2A
V
GS
=10V,R
G
=25Ω
R
L
=150Ω
-
-
-
-
6
5
25
15
-
-
-
-
nS
Source-Drain Diode Characteristics
V
SD
I
S
NOTE:
1、 Surface Mounted on FR4 Board, t ≤ 10 sec
2、 Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
3、 Guaranteed by design, not subject to production.
4、 Pulse width limited by maximum junction temperature.
Diode Forward Voltage
(NOTE1)
Diode Continuous Forward Current
I
S
=0.3A,V
GS
=0V
T
C
=25℃
-
-
0.85
-
1.2
0.3
V
A
MTM0015A
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N-Channel Enhancement MosFET Transistor
2N7002H
Ratings and Characteristic Curves
(T
A
=25℃ unless otherwise noted)
MTM0015A
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