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2SB1260I

Description
80V,1A,Medium Power PNP Bipolar Transistor, Diodes, PNP, 80V, 1A, 120, 390, 3V
CategoryDiscrete semiconductor   
File Size256KB,5 Pages
ManufacturerGalaxy Microelectronics
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2SB1260I Overview

80V,1A,Medium Power PNP Bipolar Transistor, Diodes, PNP, 80V, 1A, 120, 390, 3V

2SB1260I Parametric

Parameter NameAttribute value
MakerGalaxy Microelectronics
package instruction,
Reach Compliance Codeunknown
category
polarityPNP
V(BR)CEO (V) min.80
IC (A)1
hFE min120
hFE max390
Condition1_VCE (V)3
Condition1_IC (mA)100
VCE (sat) (V)0.4
Condition2_IC (mA)500
Condition2_IB (mA)50
fT (MHz) min.20(typ)
PD (W) max.1
AEC QualifiedNo
Maximum operating temperature150
Minimum operating temperature-55
MSL level3
Is it lead-free?Yes
Comply with ReachYes
RoHS compliantYes
ECCN codeEAR99
Package OutlinesTO-251
Product specification
Power Transistor(-80V,-1A)
FEATURES
High breakdown voltage and
high current.
BV
CEO
=-80V,I
C
=-1A
Good h
FE
VLinearity.
Low V
CE(sat).
Complements the 2SD1898.
2SB1260
Pb
Lead-free
APPLICATIONS
Epitaxial planar type PNP silicon transistor
2SB1260I
TO-251
2SB1260D
TO-252
Ordering Information
Part Number
Package
Shipping
Marking Code
2SB1260I□
2SB1260D□
□:
none is for Lead Free package;
TO-251
TO-252
80/Tube
80/Tube or2500/Tape Reel
B1260I
B1260D
“G” is for Halogen Free package.
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –DC
-Pulse
Collector power Dissipation
Junction Temperature
Storage Temperature
Value
-80
-80
-5
-1
-2
1.0
1.3 Note1
150
-55 to +150
Unit
V
V
V
A
P
C
T
j
T
stg
W
Note1:Mounted on ceramic substrate(250mm
2
*0.8t)
STM0270A
www.gmesemi.com
1

2SB1260I Related Products

2SB1260I 2SB1260D
Description 80V,1A,Medium Power PNP Bipolar Transistor, Diodes, PNP, 80V, 1A, 120, 390, 3V 80V,1A,Medium Power PNP Bipolar Transistor, Diodes, PNP, 80V, 1A, 120, 390, 3V
Maker Galaxy Microelectronics Galaxy Microelectronics
Reach Compliance Code unknown unknown
polarity PNP PNP
V(BR)CEO (V) min. 80 80
IC (A) 1 1
hFE min 120 120
hFE max 390 390
Condition1_VCE (V) 3 3
Condition1_IC (mA) 100 100
VCE (sat) (V) 0.4 0.4
Condition2_IC (mA) 500 500
Condition2_IB (mA) 50 50
fT (MHz) min. 20(typ) 20(typ)
PD (W) max. 1 1
AEC Qualified No No
Maximum operating temperature 150 150
Minimum operating temperature -55 -55
MSL level 3 3
Is it lead-free? Yes Yes
Comply with Reach Yes Yes
RoHS compliant Yes Yes
ECCN code EAR99 EAR99
Package Outlines TO-251 TO-252

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