UNISONIC TECHNOLOGIES CO., LTD
BTC1510F3
NPN EPITAXIAL PLANAR
TRANSISTOR
DESCRIPTION
NPN SILICON TRANSISTOR
As a NPN Darlington transistor the UTC
BTC1510F3
is
designed for general purpose amplifier and low speed switching
application.
FEATURES
* Very high BV
CEO
* Very low V
CE(SAT)
* Very high current gain
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Tube
Tube
Tube
Tape Reel
Tube
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
BTC1510F3L-TA3-T
BTC1510F3G-TA3-T
TO-220
BTC1510F3L-TF3-T
BTC1510F3G-TF3-T
TO-220F
BTC1510F3L-TF1-T
BTC1510F3G-TF1-T
TO-220F1
BTC1510F3L-TN3-R
BTC1510F3G-TN3-R
TO-252
BTC1510F3L-TQ2-T
BTC1510F3G-TQ2-T
TO-263
BTC1510F3L-TQ2-R
BTC1510F3G-TQ2-R
TO-263
Note: Pin Assignment: B: Base C: Collector
E: Emitter
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R223-002. E
BTC1510F3
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
V
CBO
150
V
Collector-Base Voltage
V
CEO
150
V
Collector-Emitter Voltage
Emitter-Base Voltage
V
EBO
5
V
DC
10
Collector Current
I
C
A
Pulse(Note 2)
15
TO-220/TO-220F
W
2
TO-220F1
T
A
=25°C
W
TO-252
1.1
W
TO-263
2
P
D
Collector Dissipation
W
TO-220
72
W
TO-220F/TO-220F1
36
T
C
=25°C
W
TO-252
44
W
TO-263
60
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse test: Pulse Width=100ms
ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITIONS
BV
CBO
I
C
=100µA, I
E
=0
BV
CEO
I
C
=5mA, I
B
=0
V
CE
=3V, I
C
=5A
V
BE(ON)
V
CE
=3V, I
C
=10A
I
C
=5A
V
FEC
I
CBO
V
CB
=150V, I
E
=0
I
CEO
V
CE
=150V, I
E
=0
I
EBO
V
EB
=5V, I
C
=0
h
FE
MIN
150
150
TYP
MAX UNIT
V
V
2.8
4.5
3
200
200
2
2
100
20
2
1.5
3
2
V
V
µA
µA
mA
K
V
V
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Base-Emitter Turn-On Voltage (Note)
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
DC Current Gain (Note)
V
CE
=3V, I
C
=5A
V
CE
=3V, I
C
=10A
Base-Emitter Saturation Voltage(Note)
V
BE(SAT)
I
C
=5A, I
B
=5mA
I
C
=5A, I
B
=10mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=10A, I
B
=100mA
(Note)
I
C
=5A, I
B
=2.5mA
Note: Pulse test: Pulse Width≦380μs, Duty Cycle≦2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R223-002.E
BTC1510F3
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Current, I
C
(µA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector Current, I
C
(µA)
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QW-R223-002.E
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