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AR4PG

Description
2 A, 600 V, SILICON, RECTIFIER DIODE, TO-277A
Categorysemiconductor    Discrete semiconductor   
File Size94KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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AR4PG Overview

2 A, 600 V, SILICON, RECTIFIER DIODE, TO-277A

AR4PD, AR4PG, AR4PJ
www.vishay.com
Vishay General Semiconductor
Fast Switching Avalanche Surface Mount Rectifiers
FEATURES
• Very low profile - typical height of 1.1 mm
Available
eSMP
®
Series
K
• Ideal for automated placement
• Glass passivated pellet chip junction
• Fast reverse recovery time
• Controlled avalanche characteristics
• Low leakage current
1
2
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
E
AS
V
F
at I
F
= 4.0 A
T
J
max.
Package
Circuit configuration
4.0 A
200 V, 400 V, 600 V
65 A
140 ns
20 mJ
1.02 V
175 °C
TO-277A (SMPC)
Single
For use in lighting, fast switching rectification of power
supplies, inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
MECHANICAL DATA
Case:
TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current (fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy at T
J
= 25 °C
I
AS
= 2.5 A max.
I
AS
= 1.0 A typ.
V
RRM
I
F (1)
I
F (2)
I
FSM
E
AS
T
J
, T
STG
SYMBOL
AR4PD
AR4D
200
AR4PG
AR4G
400
4.0
2.0
65
20
30
-55 to +175
AR4PJ
AR4J
600
V
A
A
mJ
°C
UNIT
Operating junction and storage temperature range
Notes
(1)
Mounted on 30 mm x 30 mm pad areas, 1 oz. FR4 PCB
(2)
Free air, mounted on recommended pad area
Revision: 22-Mar-18
Document Number: 89334
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

AR4PG Related Products

AR4PG AR4PJ AR4PGHM3/87A
Description 2 A, 600 V, SILICON, RECTIFIER DIODE, TO-277A 2 A, 600 V, SILICON, RECTIFIER DIODE, TO-277A DIODE AVALANCHE 400V 2A TO277A

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