New Product
AU3PD, AU3PG, AU3PJ
Vishay General Semiconductor
Ultrafast Avalanche Surface Mount Rectifiers
eSMP
®
Series
K
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Glass passivated chip junction
• Fast reverse recovery time
1
2
• Controlled avalanche characteristics
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
3.0 A
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
E
AS
V
F
at I
F
= 3.0 A
T
J
max.
200 V, 400 V, 600 V
75 A
75 ns
20 mJ
1.13 V
175 °C
•
Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
TYPICAL APPLICATIONS
For use in lighting, high frequency rectification and
freewheeling application in switching mode converters and
inverters for consumer, computer, automotive, and
telecommunication.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current (fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Non-repetitive avalance energy at T
J
= 25 °C
I
AS
= 2.5 A max.
I
AS
= 1.0 A typ.
V
RRM
I
F (1)
I
F (2)
I
FSM
E
AS
T
J
, T
STG
SYMBOL
AU3PD
AU3D
200
AU3PG
AU3G
400
3.0
A
1.7
45
20
mJ
30
- 55 to + 175
°C
A
AU3PJ
AU3J
600
V
UNIT
Operating junction and storage temperature range
Notes
(1)
Mounted on 14 mm x 14 mm pad areas, 1 oz. FR4 PCB
(2)
Free air, mounted on recommended pad area
Document Number: 89338
Revision: 04-May-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
AU3PD, AU3PG, AU3PJ
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Instantaneous forward voltage
TEST CONDITIONS
I
F
= 3.0 A
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
SYMBOL
V
F (1)
TYP.
1.53
1.13
0.41
70
66
72
MAX.
1.9
V
1.4
10
μA
250
75
-
ns
pF
UNIT
Reverse current
Rated V
R
I
R (2)
t
rr
C
J
Maximum reverse recovery time
Typical junction capacitance per diode
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
Rated V
R
= 4.0 V, 1 MHz
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JA
(1)
R
JM
(2)
AU3PD
AU3PG
85
°C/W
5
AU3PJ
UNIT
Notes
(1)
Free air, mounted on recommended PCB 1 oz. pad are; thermal resistance R
JA
- junction to ambient
(2)
Units mounted on PCB with 14 mm x 14 mm copper pad areas; R
- junction to mount
JM
ORDERING INFORMATION
(Example)
PREFERRED P/N
AU3PJ-M3/86A
AU3PJ-M3/87A
AU3PJHM3/86A
(1)
AU3PJHM3/86A
(1)
Note
(1)
AEC-Q101 qualified
UNIT WEIGHT (g)
0.10
0.10
0.10
0.10
PREFERRED PACKAGE CODE
86A
87A
86A
87A
BASE QUANTITY
1500
6500
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
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2
For technical questions within your region, please contact one of the following:
Document Number: 89338
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 04-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
AU3PD, AU3PG, AU3PJ
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1000
Instantaneous Reverse Current (μA)
T
M
= 155 °C
T
A
= 175 °C
100
T
A
= 125 °C
10
T
A
= 75 °C
1
DC Forward Current (A)
T
A
= 25 °C
0.1
T
A
= 25 °C
T
M
Measured
at the Cathode Band Terminal
25
50
75
100
125
150
175
0.01
10
20
30
40
50
60
70
80
90
100
T
M
- Mount Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
4.8
D = 0.3
D = 0.5
D = 0.2
D = 0.1
1000
D = 0.8
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
3.2
D = 1.0
2.4
T
Junction Capacitance (pF)
3.6
4.0
Average Power Loss (W)
100
1.6
0.8
D = t
p
/T
0
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
t
p
10
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Average Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
100
T
A
= 175 °C
T
A
= 125 °C
100
10
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
Junction-to-Ambient
10
T
A
= 75 °C
1
T
A
= 25 °C
0.1
0.2
0.7
1.2
1.7
2.2
2.7
3.2
1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Document Number: 89338
Revision: 04-May-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
AU3PD, AU3PG, AU3PJ
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-277A (SMPC)
0.187 (4.75)
0.175 (4.45)
K
0.016 (0.40)
0.006 (0.15)
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
0.087 (2.20)
0.075 (1.90)
0.047 (1.20)
0.039 (1.00)
Mounting Pad Layout
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.268
(6.80)
0.186 (4.72)
MIN.
0.049 (1.24)
0.037 (0.94)
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
Conform to JEDEC TO-277A
0.050 (1.27)
MIN.
0.041
(1.04)
0.055 (1.40)
MIN.
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For technical questions within your region, please contact one of the following:
Document Number: 89338
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 04-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
1
Document Number: 91000