Insulated Gate Bipolar Transistor, 32A I(C), 400V V(BR)CES
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Gentron Corp. |
| package instruction | , |
| Reach Compliance Code | unknown |
| Maximum collector current (IC) | 32 A |
| Collector-emitter maximum voltage | 400 V |
| Gate-emitter maximum voltage | 25 V |
| JESD-609 code | e0 |
| Number of components | 1 |
| Maximum operating temperature | 150 °C |
| Maximum power dissipation(Abs) | 250 W |
| Terminal surface | Tin/Lead (Sn/Pb) |
| VCEsat-Max | 2.4 V |