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CMT423M106

Description
Insulated Gate Bipolar Transistor, 32A I(C), 400V V(BR)CES
CategoryDiscrete semiconductor    The transistor   
File Size372KB,6 Pages
ManufacturerGentron Corp.
Download Datasheet Parametric View All

CMT423M106 Overview

Insulated Gate Bipolar Transistor, 32A I(C), 400V V(BR)CES

CMT423M106 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerGentron Corp.
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)32 A
Collector-emitter maximum voltage400 V
Gate-emitter maximum voltage25 V
JESD-609 codee0
Number of components1
Maximum operating temperature150 °C
Maximum power dissipation(Abs)250 W
Terminal surfaceTin/Lead (Sn/Pb)
VCEsat-Max2.4 V
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