EEWORLDEEWORLDEEWORLD

Part Number

Search

MJD5731_11

Description
1 A, 350 V, PNP, Si, POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size120KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

MJD5731_11 Overview

1 A, 350 V, PNP, Si, POWER TRANSISTOR

MJD5731_11 Parametric

Parameter NameAttribute value
Number of terminals2
Transistor polarityPNP
Maximum collector current1 A
Maximum Collector-Emitter Voltage350 V
Processing package descriptionROHS COMPLIANT, PLASTIC, CASE 369C, DPAK-3
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionCOLLECTOR
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor10
Rated crossover frequency10 MHz
MJD5731
High Voltage PNP Silicon
Power Transistors
D e s i g n e d f o r l i n e o p e r a t e d a u d i o o u t p u t a m p l i f i e r,
SWITCHMODE
t
power supply drivers and other switching
applications.
Features
http://onsemi.com
350 V (Min)
V
CEO(sus)
1.0 A Rated Collector Current
PNP Complements to the MJD47 thru MJD50 Series
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B
u
8000 V
Machine Model, C
u
400 V
These are Pb−Free Packages
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Continuous
Peak
Symbol
V
CEO
V
EB
I
C
P
D
P
D
Max
350
5
1.0
3.0
15
0.12
1.56
0.0125
20
−55
to +150
Unit
Vdc
Vdc
Adc
SILICON
POWER TRANSISTORS
1.0 AMPERE
350 VOLTS, 15 WATTS
4
1 2
3
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
W
W/°C
W
W/°C
mJ
°C
A
Y
WW
J5731
G
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
AYWW
J
5731G
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Total Power Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
Unclamped Inductive Load Energy
(See Figure 10)
Operating and Storage Junction
Temperature Range
E
T
J
, T
stg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
(Note 1)
Lead Temperature for Soldering
Symbol
R
qJC
R
qJA
T
L
Max
8.33
80
260
Unit
°C/W
°C/W
°C
ORDERING INFORMATION
Device
MJD5731T4G
Package
DPAK
(Pb−Free)
Shipping
2500/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2011
January, 2011
Rev. 4
1
Publication Order Number:
MJD5731/D

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2571  23  210  241  1945  52  1  5  40  48 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号