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2SK303V2

Description
Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size148KB,4 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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2SK303V2 Overview

Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, SOT-23, 3 PIN

2SK303V2 Parametric

Parameter NameAttribute value
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)0.02 A
FET technologyJUNCTION
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.2 W
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
UTC 2SK303
Low-Frequency General-Purpose
Amplifier Applications
FEATURES
* Ideal for potentiometers, analog switches, low
frequency amplifiers, constant current supplies, and
impedance conversion.
JFET
2
1
3
SOT-23
1: Drain
2: Source
3: Gate
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junctin Temperature
Storage Temperature
SYMBOL
V
DSS
V
GDS
I
G
I
D
P
D
T
j
T
stg
RATINGS
30
-30
10
20
200
150
-55 ~ +150
UNIT
V
V
mA
mA
mW
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
PARAMETER
Gate-to-Drain
Gate-to-Source Leakage Current
Zero-Gate Voltage Drain Current
Cutoff Voltage
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Drain-to- Source ON Resistance
SYMBOL
V
(BR)GDS
I
GSS
I
DSS
*
V
GS(off)
| yfs |
C
i
SS
C
r
SS
R
DS (ON)
TEST CONDITIONS
I
G
=-10μA
V
GS
=-20V
V
DS
=10V, V
GS
=0
V
DS
=10V, I
D
=1μA
V
DS
=10V, V
GS
=0, f=1MHz
V
DS
=10V, V
GS
=0, f=1MHz
V
DS
=10V, V
GS
=0, f=1MHz
V
DS
=10mV, V
GS
=0
MIN
-30
0.6*
2.5
TYP
MAX
-1.0
12.0*
-4
UNIT
V
nA
mA
V
mS
pF
pF
-1
6.0
5
1.5
250
CLASSIFICATION OF I
DSS
RANK
MARKING CODE
I
DSS
(mA)
V2
V2
0.6 ~ 1.5
V3
V3
1.2 ~ 3.0
V4
V4
2.5 ~ 6.0
V5
V5
5.0 ~ 12.0
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R206-071,A

2SK303V2 Related Products

2SK303V2 2SK303V3 2SK303V4 2SK303V5
Description Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, SOT-23, 3 PIN Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, SOT-23, 3 PIN Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, SOT-23, 3 PIN Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, SOT-23, 3 PIN
Parts packaging code SOT-23 SOT-23 SOT-23 SOT-23
package instruction SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3
Contacts 3 3 3 3
Reach Compliance Code compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 30 V 30 V 30 V 30 V
Maximum drain current (ID) 0.02 A 0.02 A 0.02 A 0.02 A
FET technology JUNCTION JUNCTION JUNCTION JUNCTION
JESD-30 code R-PDSO-F3 R-PDSO-F3 R-PDSO-F3 R-PDSO-F3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.2 W 0.2 W
surface mount YES YES YES YES
Terminal form FLAT FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1

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