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MPSW51RLRAG

Description
1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226
CategoryDiscrete semiconductor    The transistor   
File Size97KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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MPSW51RLRAG Overview

1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226

MPSW51RLRAG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Manufacturer packaging codeCASE 29-10
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-226
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)2.5 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
MPSW51, MPSW51A
One Watt High Current
Transistors
PNP Silicon
Features
http://onsemi.com
COLLECTOR
3
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
MPSW51
MPSW51A
MPSW51
MPSW51A
Symbol
V
CEO
Value
−30
−40
−40
−50
−5.0
−1000
1.0
8.0
2.5
20
−55
to +150
Unit
Vdc
2
BASE
1
EMITTER
Collector
−Base
Voltage
V
CBO
Vdc
Emitter
−Base
Voltage
Collector Current
Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
12
1
2
TO−92 1 WATT
(TO−226)
CASE 29−10
STYLE 1
3
STRAIGHT LEAD
BULK PACK
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
125
50
Unit
°C/W
°C/W
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
MPS
W51x
AYWW
G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
x
= 51A Devices
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2010
August, 2010
Rev. 4
1
Publication Order Number:
MPSW51/D

MPSW51RLRAG Related Products

MPSW51RLRAG MPSW51_10
Description 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226
Number of components 1 1
Number of terminals 3 3
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM
Transistor component materials SILICON SILICON

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