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MPSW51_10

Description
1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226
Categorysemiconductor    Discrete semiconductor   
File Size97KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MPSW51_10 Overview

1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226

MPSW51_10 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current1 A
Maximum Collector-Emitter Voltage40 V
Processing package descriptionROHS COMPLIANT, CASE 29-10, TO-92, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeROUND
Package SizeCYLINDRICAL
Terminal formTHROUGH-HOLE
terminal coatingTIN SILVER COPPER
Terminal locationBOTTOM
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Number of components1
Transistor component materialsSILICON
Maximum ambient power consumption1 W
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor50
Rated crossover frequency50 MHz
MPSW51, MPSW51A
One Watt High Current
Transistors
PNP Silicon
Features
http://onsemi.com
COLLECTOR
3
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
MPSW51
MPSW51A
MPSW51
MPSW51A
Symbol
V
CEO
Value
−30
−40
−40
−50
−5.0
−1000
1.0
8.0
2.5
20
−55
to +150
Unit
Vdc
2
BASE
1
EMITTER
Collector
−Base
Voltage
V
CBO
Vdc
Emitter
−Base
Voltage
Collector Current
Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
12
1
2
TO−92 1 WATT
(TO−226)
CASE 29−10
STYLE 1
3
STRAIGHT LEAD
BULK PACK
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
125
50
Unit
°C/W
°C/W
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
MPS
W51x
AYWW
G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
x
= 51A Devices
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2010
August, 2010
Rev. 4
1
Publication Order Number:
MPSW51/D

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MPSW51_10 MPSW51RLRAG
Description 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226
Number of terminals 3 3
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM
Number of components 1 1
Transistor component materials SILICON SILICON
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