MB81C4257-12C datasheet, PDF - EEWORLD Datasheet

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MB81C4257-12C: DescriptionNibble Mode DRAM, 256KX4, 120ns, CMOS, CDIP20; Categorystorage storage; File Size554KB，23 Pages; ManufacturerFUJITSU; Websitehttp://edevice.fujitsu.com/fmd/en/index.html

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MB81C4257-12C Overview

Nibble Mode DRAM, 256KX4, 120ns, CMOS, CDIP20

MB81C4257-12C Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	FUJITSU
Parts packaging code	DIP
package instruction	DIP, DIP20,.3
Contacts	20
Reach Compliance Code	unknown
Maximum access time	120 ns
I/O type	COMMON
JESD-30 code	R-XDIP-T20
JESD-609 code	e0
memory density	1048576 bit
Memory IC Type	NIBBLE MODE DRAM
memory width	4
Number of terminals	20
word count	262144 words
character code	256000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX4
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP20,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Certification status	Not Qualified
refresh cycle	512
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

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MB81C4257-12C Related Products

	MB81C4257-12C	MB81C4257-85C	MB81C4257-10PJ	MB81C4257-10C	MB81C4257-10PSZ	MB81C4257-85P	MB81C4257-85PJ	MB81C4257-10P
Description	Nibble Mode DRAM, 256KX4, 120ns, CMOS, CDIP20	Nibble Mode DRAM, 256KX4, 85ns, CMOS, CDIP20, SIDE BRAZED, CERAMIC, DIP-20	Nibble Mode DRAM, 256KX4, 100ns, CMOS, PDSO20	Nibble Mode DRAM, 256KX4, 100ns, CMOS, CDIP20	Nibble Mode DRAM, 256KX4, 100ns, CMOS, PZIP20	Nibble Mode DRAM, 256KX4, 85ns, CMOS, PDIP20, PLASTIC, DIP-20	Nibble Mode DRAM, 256KX4, 85ns, CMOS, PDSO20, PLASTIC, LCC-26/20	Nibble Mode DRAM, 256KX4, 100ns, CMOS, PDIP20, PLASTIC, DIP-20
package instruction	DIP, DIP20,.3	SIDE BRAZED, CERAMIC, DIP-20	SOJ, SOJ20/26,.34	DIP, DIP20,.3	ZIP, ZIP20,.1	DIP,	SOJ,	DIP,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Maximum access time	120 ns	85 ns	100 ns	100 ns	100 ns	85 ns	85 ns	100 ns
JESD-30 code	R-XDIP-T20	R-CDIP-T20	R-PDSO-J20	R-XDIP-T20	R-PZIP-T20	R-PDIP-T20	R-PDSO-J20	R-PDIP-T20
memory density	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit
Memory IC Type	NIBBLE MODE DRAM	NIBBLE MODE DRAM	NIBBLE MODE DRAM	NIBBLE MODE DRAM	NIBBLE MODE DRAM	NIBBLE MODE DRAM	NIBBLE MODE DRAM	NIBBLE MODE DRAM
memory width	4	4	4	4	4	4	4	4
Number of terminals	20	20	20	20	20	20	20	20
word count	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
character code	256000	256000	256000	256000	256000	256000	256000	256000
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	256KX4	256KX4	256KX4	256KX4	256KX4	256KX4	256KX4	256KX4
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	CERAMIC	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	DIP	SOJ	DIP	ZIP	DIP	SOJ	DIP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	SMALL OUTLINE	IN-LINE	IN-LINE	IN-LINE	SMALL OUTLINE	IN-LINE
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	512	512	512	512	512	512	512	512
surface mount	NO	NO	YES	NO	NO	NO	YES	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	THROUGH-HOLE	THROUGH-HOLE	J BEND	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	J BEND	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	1.27 mm	2.54 mm	1.27 mm	2.54 mm	1.27 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	ZIG-ZAG	DUAL	DUAL	DUAL

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