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MB81C4257-85P

Description
Nibble Mode DRAM, 256KX4, 85ns, CMOS, PDIP20, PLASTIC, DIP-20
Categorystorage    storage   
File Size554KB,23 Pages
ManufacturerFUJITSU
Websitehttp://edevice.fujitsu.com/fmd/en/index.html
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MB81C4257-85P Overview

Nibble Mode DRAM, 256KX4, 85ns, CMOS, PDIP20, PLASTIC, DIP-20

MB81C4257-85P Parametric

Parameter NameAttribute value
Objectid1419673251
package instructionDIP,
Reach Compliance Codeunknown
ECCN codeEAR99
access modeNIBBLE
Maximum access time85 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 codeR-PDIP-T20
length24.59 mm
memory density1048576 bit
Memory IC TypeNIBBLE MODE DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals20
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
refresh cycle512
Maximum seat height5 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
width7.62 mm

MB81C4257-85P Related Products

MB81C4257-85P MB81C4257-85C MB81C4257-10PJ MB81C4257-10C MB81C4257-10PSZ MB81C4257-12C MB81C4257-85PJ MB81C4257-10P
Description Nibble Mode DRAM, 256KX4, 85ns, CMOS, PDIP20, PLASTIC, DIP-20 Nibble Mode DRAM, 256KX4, 85ns, CMOS, CDIP20, SIDE BRAZED, CERAMIC, DIP-20 Nibble Mode DRAM, 256KX4, 100ns, CMOS, PDSO20 Nibble Mode DRAM, 256KX4, 100ns, CMOS, CDIP20 Nibble Mode DRAM, 256KX4, 100ns, CMOS, PZIP20 Nibble Mode DRAM, 256KX4, 120ns, CMOS, CDIP20 Nibble Mode DRAM, 256KX4, 85ns, CMOS, PDSO20, PLASTIC, LCC-26/20 Nibble Mode DRAM, 256KX4, 100ns, CMOS, PDIP20, PLASTIC, DIP-20
package instruction DIP, SIDE BRAZED, CERAMIC, DIP-20 SOJ, SOJ20/26,.34 DIP, DIP20,.3 ZIP, ZIP20,.1 DIP, DIP20,.3 SOJ, DIP,
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
Maximum access time 85 ns 85 ns 100 ns 100 ns 100 ns 120 ns 85 ns 100 ns
JESD-30 code R-PDIP-T20 R-CDIP-T20 R-PDSO-J20 R-XDIP-T20 R-PZIP-T20 R-XDIP-T20 R-PDSO-J20 R-PDIP-T20
memory density 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit
Memory IC Type NIBBLE MODE DRAM NIBBLE MODE DRAM NIBBLE MODE DRAM NIBBLE MODE DRAM NIBBLE MODE DRAM NIBBLE MODE DRAM NIBBLE MODE DRAM NIBBLE MODE DRAM
memory width 4 4 4 4 4 4 4 4
Number of terminals 20 20 20 20 20 20 20 20
word count 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words
character code 256000 256000 256000 256000 256000 256000 256000 256000
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 256KX4 256KX4 256KX4 256KX4 256KX4 256KX4 256KX4 256KX4
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY CERAMIC PLASTIC/EPOXY CERAMIC PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code DIP DIP SOJ DIP ZIP DIP SOJ DIP
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE SMALL OUTLINE IN-LINE IN-LINE IN-LINE SMALL OUTLINE IN-LINE
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 512 512 512 512 512 512 512 512
surface mount NO NO YES NO NO NO YES NO
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form THROUGH-HOLE THROUGH-HOLE J BEND THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE J BEND THROUGH-HOLE
Terminal pitch 2.54 mm 2.54 mm 1.27 mm 2.54 mm 1.27 mm 2.54 mm 1.27 mm 2.54 mm
Terminal location DUAL DUAL DUAL DUAL ZIG-ZAG DUAL DUAL DUAL
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