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MBRS410LT3_05

Description
4 A, 10 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size120KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

MBRS410LT3_05 Overview

4 A, 10 V, SILICON, RECTIFIER DIODE

MBRS410LT3_05 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionLEAD FREE, PLASTIC, CASE 403-03, SMC, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Diode typerectifier diode
applicationPOWER
Phase1
Maximum repetitive peak reverse voltage10 V
Maximum average forward current4 A
Maximum non-repetitive peak forward current150 A
MBRS410L, NRVBS410L
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
Typical applications are AC−DC and DC−DC converters, reverse
battery protection, and “ORing” of multiple supply voltages and any
other application where performance and size are critical.
Features
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
4.0 AMPERES, 10 VOLTS
Ultra Low V
F
1st in the Market Place with a 10 V
R
Schottky Rectifier
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guard−Ring for Stress Protection
NRVBS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics
SMC 2−LEAD
CASE 403AC
MARKING DIAGRAM
AYWW
B4L1G
G
B4L1
A
Y
WW
G
= Specific Device Code
= Assembly Location**
= Year
= Work Week
= Pb−Free Package
Case: Epoxy, Molded
Weight: 217 mg (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
(Note: Microdot may be in either location)
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly code
may be blank.
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Polarity Band on Plastic Body Indicates Cathode Lead
ESD Ratings: Machine Model = C
Human Body Model = 3B
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(@ T
L
= 110°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Operating Junction Temperature
Symbol
V
RRM
V
RWM
V
R
I
O
I
FSM
Value
10
Unit
V
ORDERING INFORMATION
Device
MBRS410LT3G
NRVBS410LT3G*
Package
SMC
(Pb−Free)
SMC
(Pb−Free)
Shipping
2500 / Tape & Reel
2500 / Tape & Reel
4.0
150
A
A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
T
J
−65
to +125
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
©
Semiconductor Components Industries, LLC, 2016
August, 2017
Rev. 7
1
Publication Order Number:
MBRS410LT3/D

MBRS410LT3_05 Related Products

MBRS410LT3_05 NRVBS410LT3G MBRS410LT3G
Description 4 A, 10 V, SILICON, RECTIFIER DIODE DIODE SCHOTTKY 4A 10V SMB2 DC reverse withstand voltage (Vr): 10V Average rectified current (Io): 4A Forward voltage drop (Vf): 225mV @ 4A 10V, 4A
Number of terminals 2 2 2
Number of components 1 1 1
surface mount Yes YES YES
Terminal form C BEND J BEND C BEND
Terminal location pair DUAL DUAL
Diode component materials silicon SILICON SILICON
Diode type rectifier diode RECTIFIER DIODE RECTIFIER DIODE
application POWER POWER POWER
Phase 1 1 1
Maximum repetitive peak reverse voltage 10 V 10 V 10 V
Maximum non-repetitive peak forward current 150 A 150 A 150 A
Brand Name - ON Semiconductor ON Semiconductor
Is it lead-free? - Lead free Lead free
package instruction - R-PDSO-J2 SMC, 2 PIN
Manufacturer packaging code - 403AC 403AC
Reach Compliance Code - not_compliant not_compliant
Factory Lead Time - 11 weeks 10 weeks
Other features - FREE WHEELING DIODE FREE WHEELING DIODE
Configuration - SINGLE SINGLE
Maximum forward voltage (VF) - 0.35 V 0.2 V
JESD-30 code - R-PDSO-J2 R-PDSO-C2
JESD-609 code - e3 e3
Humidity sensitivity level - 1 1
Maximum operating temperature - 125 °C 125 °C
Minimum operating temperature - -65 °C -65 °C
Maximum output current - 4 A 4 A
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - NOT SPECIFIED 260
technology - SCHOTTKY SCHOTTKY
Terminal surface - Tin (Sn) Tin (Sn)
Maximum time at peak reflow temperature - NOT SPECIFIED 40

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