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SUR566EF

Description
Epitaxial planar NPN silicon transistor
CategoryDiscrete semiconductor    The transistor   
File Size274KB,5 Pages
ManufacturerKODENSHI
Websitehttp://www.kodenshi.co.jp
Download Datasheet Parametric View All

SUR566EF Overview

Epitaxial planar NPN silicon transistor

SUR566EF Parametric

Parameter NameAttribute value
MakerKODENSHI
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)80
Number of components2
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.1 W
surface mountYES
Transistor component materialsSILICON
Base Number Matches1
SUR566EF
Epitaxial planar NPN silicon transistor
Description
Dual chip digital transistor
Features
Two SRC1207 chips in SOT-563F package
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Package : SOT-563F
Ordering Information
Type NO.
SUR566EF
Marking
5X
Package Code
SOT-563F
: Year & Week Code
Equivalent circuit & PIN Connections
Equivalent Circuit
R
1
R1
R2
R2
R1
R
2
47KΩ
47KΩ
Tr1
Tr1
Tr2
10KΩ
10KΩ
Tr2
PIN Connections
1. COMMON 1
2. COMMON 2
3. IN 2
4. OUT 2
5. IN 1
6. OUT 1
Absolute Maximum Ratings
[Tr1, Tr2]
Characteristic
Output voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature range
※:
Total rating
(Ta=25°C)
Symbol
V
O
V
I
I
O
P
D
T
J
T
stg
Rating
50
30,-6
100
150
150
-55 ~ 150
Unit
V
V
mA
mW
°C
°C
KSD-R5U011-001
1

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