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SUT061G

Description
Dual NPN Bipolar transistor
File Size365KB,5 Pages
ManufacturerKODENSHI
Websitehttp://www.kodenshi.co.jp
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SUT061G Overview

Dual NPN Bipolar transistor

SUT061G
Dual NPN Bipolar transistor
Descriptions
General purpose amplifier
Recommended for LED Drive Application
Features
Thermally Enhanced Power PKG
Low saturation: V
CE
(sat)= 0.4V Max
2 NPN chips in TESOP-8 Package
TESOP-8
Ordering Information
Type NO.
SUT061
Marking
SUT061
Package Code
TESOP-8
: Year & Week Code
Absolute maximum ratings(TR1, TR2)
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
P
C
(Ta=25°C) **
P
C
(Tc=25°C)
Ratings
80
60
5
1
2
0.75
0.55
7.5
150
-55~150
Unit
V
V
V
A(DC)
A(Pulse)
W/TOTAL
W/ELEMENT
W/TOTAL
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
* : Single pulse, tp= 300
T
J
T
stg
** : Each terminal mounted on a recommended solder land
Electrical Characteristics(TR1, TR2)
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Base-Emitter on voltage
Collector-Emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
1)
V
BE(ON)
V
CE(sat)
C
ob
f
T
Test Condition
I
C
=100
㎂,
I
E
=0
I
C
=1mA, I
B
=0
I
E
=10mA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=100mA
V
CE
=2V, I
C
=1A
V
CE
=2V, I
C
=500mA
I
C
=500mA, I
B
=50mA
V
CB
=10V, I
E
=0, f=1MHz
V
CB
=10V, I
C
=50mA
Min.
80
60
5
-
-
200
80
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
10
160
Max.
-
-
-
0.1
0.1
400
-
1.2
0.4
-
-
Unit
V
V
V
μA
μA
-
V
V
pF
MHz
Note 1) hFE Rank : 200~400 only
KSD-T7K002-000
1

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