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SRC1204EF

Description
NPN Silicon Transistor
CategoryDiscrete semiconductor    The transistor   
File Size252KB,4 Pages
ManufacturerKODENSHI
Websitehttp://www.kodenshi.co.jp
Download Datasheet Parametric View All

SRC1204EF Overview

NPN Silicon Transistor

SRC1204EF Parametric

Parameter NameAttribute value
MakerKODENSHI
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)80
Number of components1
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
surface mountYES
Transistor component materialsSILICON
SRC1204EF
NPN Silicon Transistor
Descriptions
Switching application
Interface circuit and driver circuit application
PIN Connection
OUT
R1
Features
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing
process
High packing density
IN
OUT
IN
R2
COMMON
COMMON
R
1
47KΩ
R
2
47KΩ
Ordering Information
Type No.
SRC1204EF
Marking
R4
Package Code
SOT-523F
SOT-523F
①Device
Code
②Year&Week
Code
Absolute Maximum Ratings
Characteristic
Output voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature range
(Ta=25°C)
Symbol
V
O
V
I
I
O
P
D
T
J
T
stg
Rating
50
40,-10
100
150
150
-55 ~ 150
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Output cut-off current
DC current gain
Output voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Input current
Input resistor (Input to base)
Input resistor (Base to common)
(Ta=25°C)
Symbol
I
O(OFF)
G
I
V
O(ON)
V
I(ON)
V
I(OFF)
f
T
*
I
I
R
1
R
2
Test Condition
V
O
=50V, V
I
=0
V
O
=5V, I
O
=10mA
I
O
=10mA, I
I
=0.5mA
V
O
=0.2V, I
O
=5mA
V
O
=5V, I
O
=0.1mA
V
O
=10V, I
O
=5mA, f=1MHz
V
I
=5V, I
O
=0
-
-
Min. Typ. Max.
-
80
-
-
1.0
-
-
33
33
-
200
0.1
2.8
1.2
200
-
47
47
-
0.18
61
61
500
-
0.3
5.0
-
Unit
nA
-
V
V
V
MHz
mA
* : Characteristic of transistor only
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