PRELIMINARY
< High-power GaN HEMT (small signal gain stage) >
MGF0840G
L to C BAND / 10W
non - matched
DESCRIPTION
The MGF0840G, GaN HEMT with an N-channel schottky
gate, is designed for MMDS/UMTS/WiMAX applications.
OUTLINE DRAW
ING
Unit : m illim eters
FEATURES
High voltage operation
VDS=47V
High output power
Po=40.5dBm(TYP.) @f=2.6GHz,P3dB
High efficiency
d=60%(TYP.)
@f=2.6GHz,P3dB
Designed for use in Class AB linear amplifiers
①
2MIN
φ2.2
0.6±0.2
APPLICATION
MMDS/UMTS/WiMAX
③
QUALITY
GG
Packaging
1.65
RECOMMENDED BIAS CONDITIONS
Vds=47V
Ids=90mA
Rg=120
(Ta=25C)
0.1
4 inch Tray (25 pcs)
5.0
0.65
Absolute maximum ratings
Symbol
V
DS
V
GS
I
GR
I
GF
P
T*1
Tch
Tstg
14.0
Parameter
Drain to Source Voltage
Gate to source voltage
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
Ratings
120
-10
-1.5
30
21
230
-65 to +175
Unit
V
V
mA
mA
W
C
C
GF-7
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
*1:Tc=25C
Electrical characteristics
Symbol
VGS(off)
P3dB
(Ta=25C)
Parameter
Gate to source cut-off voltage
3dB gain compression power
Drain efficiency
Linear power gain
Thermal resistance
Test conditions
Min.
VDS=47V,ID=3mA
VDS=47V,ID(RF off)=90mA
f=2.6GHz
*2 :
Pin=20dBm
Limits
Typ.
-
40.5
60
15
6.8
Unit
Max.
-5
-
-
-
9.8
V
dBm
%
dB
C/W
-1
39.5
-
14
-
d
GLP
*2
Rth(ch-c) *3
ΔVf
method
*3 :Channel-case
Specification are subject to change without notice.
Note
DC aging is recommended to perform before operating in order to stabilize a characteristics of GaN-HEMT. (Ta≧80C)
Bias conditions
Vds=47V , Ids=90mA
Time
10hrs
Publication Date : May., 2011
1
1.9±0.4
9.0±0.2
2MIN
②
②
4.4+0/-0.3
< High-power GaN HEMT (small signal gain stage) >
MGF0840G
L to C BAND / 10W
non - matched
PRELIMINARY
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any
third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are subject
to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It
is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product
listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi
Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these
inaccuracies or errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means,
including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
•When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before making
a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or
system that is used under circumstances in which human life is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or systems
for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or
in part these materials.
•If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other than
the approved destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor
for further details on these materials or the products contained therein.
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : May., 2011
4
MicroPython Open Source section
京公网安备 11010802033920号
EEWORLD
