SSG4910N
Elektronische Bauelemente
10 A, 30 V, R
DS(ON)
13.5 m
Dual-N Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low R
DS(on)
and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
SOP-8
B
L
D
M
FEATURES
Low R
DS(on)
provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
A
C
N
J
K
H
G
F
E
PACKAGE INFORMATION
Package
SOP-8
MPQ
2.5K
LeaderSize
13’ inch
REF.
A
B
C
D
E
F
G
Millimeter
Min.
Max.
5.80
6.20
4.80
5.00
3.80
4.00
0°
8°
0.40
0.90
0.19
0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
0.35
0.49
0.375 REF.
45°
1.35
1.75
0.10
0.25
0.25 REF.
S
G
S
G
D
D
D
D
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
1
Symbol
V
DS
V
GS
T
A
= 25°C
T
A
= 70°C
I
D
I
D
I
DM
I
S
P
D
P
D
T
J
, T
STG
R
θJC
R
θJA
T
A
= 25°C
T
A
= 70°C
Ratings
30
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
±
20
10
8.2
50
2.3
2.1
1.3
-55 ~ 150
40
60
Continuous Source Current (Diode Conduction)
Total Power Dissipation
1
Operating Junction & Storage Temperature Range
Maximum Junction to Case
Notes:
1
2
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
1
1
THERMAL RESISTANCE RATINGS
t
≦
5 sec
t
≦
5 sec
Maximum Junction to Ambient
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
06-Jan-2011 Rev. A
Page 1 of 4
SSG4910N
Elektronische Bauelemente
10 A, 30 V, R
DS(ON)
13.5 m
Dual-N Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-Resistance
1
Forward Transconductance
Diode Forward Voltage
Pulsed Source Current(BodyDiode)
1
1
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(ON)
g
fs
V
SD
I
SM
Min.
30
1
-
-
-
20
-
-
-
-
-
-
Typ.
Static
-
-
-
-
-
-
-
-
-
40
0.7
5
Max.
-
-
Unit
V
V
nA
μA
μA
A
mΩ
S
V
A
Test conditions
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 0V, V
GS
= 20V
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 55°C
V
DS
= 5V, V
GS
= 10V
V
GS
= 10V, I
D
= 10A
V
GS
= 4.5V, I
D
= 8A
V
GS
= 10V, I
D
= 15A, T
J
= 55°C
V
DS
= 15V, I
D
= 10A
I
S
= 2.3A, V
GS
= 0V
±
100
1
25
-
13.5
20
15
-
-
-
Dynamic
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes:
1
2
Pulse test：PW
≦
300
μs
duty cycle
≦
2%.
Guaranteed by design, not subject to production testing.
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
-
-
-
20
7.0
7.0
20
9
70
20
-
-
-
-
-
-
-
nS
nC
I
D
= 10A
V
DS
= 15V
V
GS
= 5V
V
DD
= 25V
I
D
= 1A
V
GEN
= 10V
R
L
= 25Ω
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
06-Jan-2011 Rev. A
Page 2 of 4
SSG4910N
Elektronische Bauelemente
10 A, 30 V, R
DS(ON)
13.5 m
Dual-N Enhancement Mode Power MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
06-Jan-2011 Rev. A
Page 3 of 4
SSG4910N
Elektronische Bauelemente
10 A, 30 V, R
DS(ON)
13.5 m
Dual-N Enhancement Mode Power MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
06-Jan-2011 Rev. A
Page 4 of 4
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