SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG03DBTFC
TVS Diode for ESD
Protection in Portable Electronics
CATHODE MARK
FEATURES
Transient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
IEC 61000-4-4(EFT) 40A(tp=5/50ns)
IEC 61000-4-5(Lightning) 5A(tp=8/20 s)
Bidirectional Type Pin Configuration Structure.
Small package for use in portable electronics.
Suitable replacement for Multi-Layer Varistors in ESD protection applications.
Protects one I/O or power line.
E
B
A
2
D
C
1
DIM
A
B
C
D
E
F
MILLIMETERS
_
1.00 + 0.05
0.80+0.10/-0.05
_
0.60 + 0.05
_
0.30 + 0.05
0.40 MAX
_
0.13 + 0.05
Low clamping voltage.
Low leakage current.
1. ANODE
2. ANODE
F
APPLICATIONS
Cell phone handsets and accessories.
Cordless phone
Personal digital assistants (PDA s)
Notebooks, desktops, & servers.
Portable instrumentation.
TFSC
Marking
CHARACTERISTIC
Peak Pulse Power (tp=8/20 s)
Junction Temperature
Storage Temperature
SYMBOL
P
PK
T
j
T
stg
RATING
50
-55 150
-55 150
UNIT
W
2
T
1
MAXIMUM RATING (Ta=25
)
2
1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Junction Capacitance
SYMBOL
V
RWM
V
BR
I
R
V
C
C
J
I
t
=1mA
V
RWM
=3.3V
I
PP
=5A, tp=8/20 s
V
R
=0V, f=1MHz
TEST CONDITION
-
MIN.
-
4.2
-
-
-
TYP.
-
-
-
-
-
MAX.
3.3
6.2
20
17
25
UNIT
V
V
A
V
pF
2007. 9. 10
Revision No : 1
1/2
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