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YA868C15R

Description
30 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size53KB,3 Pages
ManufacturerFUJI
Websitehttp://www.fujielectric.co.jp/eng/fdt/scd/
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YA868C15R Overview

30 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB

YA868C15R
(30A)
High Voltage Schottky barrier diode
Major characteristics
Characteristics
YA868C15R
Units Condition
V
RRM
V
F
I
O
150
0.90
30
V
V
A
Tc=25°C MAX.
10
+0.5
0
(150V / 30A )
[0401]
Outline drawings, mm
Ø3.6
±0.2
2.7
±0.1
4.5
±0.2
0
14
-0.5
1.2
3.7
±0.2
15
±0.2
6.4
±0.2
0.4
0.8
2.54
5.08
2.7
Features
Low V
F
High Voltage
Center tap connection
Applications
High frequency operation
DC-DC converters
AC adapter
Package : TO-220
Epoxy resin UL : V-0
Connection diagram
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C Unless otherwise specified )
Item
Repetitive peak surge reverse voltage
Repetitive peak reverse voltage
Average output current
Non-repetitive surge current **
Operating junction temperature
Storage temperature
Symbol
V
RSM
V
RRM
I
o
I
FSM
T
j
T
stg
Square wave, duty=
1/2
Tc=118°C
Sine wave
10ms 1shot
Conditions
tw=500ns, duty=1/40
1
2
3
Rating
150
150
30 *
225
+150
-40 to +150
Unit
V
V
A
A
°C
°C
*
Out put current of center tap full wave connection
**Rating per element
Electrical characteristics (at Tc=25°C Unless otherwise specified )
Item
Forward voltage drop
Reverse current
Thermal resistance
Symbol
V
F
I
R
Rth(j-c)
Conditions
I
FM
=15A
V
R
=V
RRM
Junction to case
Max.
0.90
200
1.0
Unit
V
µA
°C/W
Mechanical characteristics
Mounting torque
Approximate mass
Recommended torque
0.3 to 0.5
2
N·m
g

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