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KS986S3

Description
300 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size553KB,6 Pages
ManufacturerFUJI
Websitehttp://www.fujielectric.co.jp/eng/fdt/scd/
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KS986S3 Overview

300 V, SILICON, RECTIFIER DIODE

http://www.fujisemi.com
KS986S3
Low-Loss Fast Recovery Diode
Maximum Rating and Characteristics
Maximum ratings (at Ta=25˚C unless otherwise specified.)
Item
Repetitive peak reverse voltage
Average forward current
Non-repetitive surge current
Operating junction temperature
Storage temperature
Symbols
V
RRM
I
FAV
I
FSM
Tj
Tstg
Conditions
-
50Hz Square wave duty =1/2
Tc = 128˚C
Sine wave, 10ms 1shot
Ratings
300
5
90
-40 to +150
-40 to +150
FUJI Diode
Units
V
A
A
˚C
˚C
-
-
Electrical characteristics
Item
Forward voltage
Reverse current
Reverse recovery time
Thermal resistance
(at Ta=25˚C unless otherwise specified.)
Symbols
V
F
I
R
trr
Rth(j-c)
I
F
= 5 A
V
R
=V
RRM
I
F
= 0.1A, I
R
= 0.2A, Irec = 0.05A
Junction to case
Conditions
Maximum
1.3
20
40
3.5
Units
V
μA
μs
˚C/W
Mechanical characteristics
Item
Approximate mass
Conditions
-
Maximum
0.6
Units
g
1

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Index Files: 1246  2791  2923  1084  1019  26  57  59  22  21 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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