7MBR50VM120-50
IGBT MODULE (V series)
1200V / 50A / PIM
Features
Low V
CE
(sat)
Compact Package
P.C.Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
RoHS compliant product
IGBT Modules
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Inverter
Collector current
Collector power dissipation
Collector-Emitter voltage
Gate-Emitter voltage
Brake
Collector current
Collector power dissipation
Repetitive peak reverse voltage (Diode)
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I
2
t (Non-Repetitive)
Symbols
V
CES
V
GES
Ic
Icp
-Ic
-Ic pulse
Pc
V
CES
V
GES
I
C
I
CP
P
C
VRRM
VRRM
I
O
I
FSM
I
2
t
Tj
Tjop
Tc
Tstg
AC : 1min.
M5
Conditions
Maximum
ratings
1200
±20
50
100
50
100
280
1200
±20
35
70
210
1200
1600
50
360
648
175
150
150
150
125
-40 to +125
2500
3.5
Units
V
V
A
W
V
V
A
W
V
V
A
A
A
2
s
Continuous
1ms
1ms
1 device
Tc=80°C
Tc=80°C
Continuous
1ms
1 device
Tc=80°C
Tc=80°C
Converter
50Hz/60Hz, sine wave
10ms, Tj=150°C
half sine wave
Inverter, Brake
Converter
Inverter, Brake
Converter
Junction temperature
Operating junciton temperature
(under switching conditions)
Case temperature
Storage temperature
Isolation voltage
Screw torque
°C
between terminal and copper base (*1)
V
iso
between thermistor and others (*2)
Mounting (*3)
-
VAC
Nm
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
1
7MBR50VM120-50
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Symbols
I
CES
I
GES
V
GE (th)
V
CE (sat)
(terminal)
Collector-Emitter saturation voltage
V
CE (sat)
(chip)
Inverter
Input capacitance
Turn-on time
Turn-off time
Cies
ton
tr
tr (i)
toff
tf
V
F
(terminal)
Forward on voltage
V
F
(chip)
Reverse recovery time
Zero gate voltage collector current
Gate-Emitter leakage current
trr
I
CES
I
GES
V
CE (sat)
(terminal)
Brake
Collector-Emitter saturation voltage
V
CE (sat)
(chip)
Turn-on time
Turn-off time
Reverse current
Thermistor Converter
Forward on voltage
Reverse current
Resistance
B value
ton
tr
toff
tf
IRRM
V
FM
(chip)
IRRM
R
B
V
GE
= 15V
I
C
= 35A
V
CE
= 600V
I
C
= 35A
V
GE
= +15 / -15V
R
G
= 27Ω
V
R
= 1200V
I
F
= 50A
V
R
= 1600V
T = 25°C
T = 100°C
T = 25 / 50°C
terminal
chip
I
F
= 50A
I
F
= 50A
V
GE
= 0V
V
CE
= 1200V
V
CE
= 0V
V
GE
= +20 / -20V
V
GE
= 15V
I
C
= 35A
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Conditions
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
GE
= ±20V
V
CE
= 20V, I
C
= 50mA
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
V
GE
= 15V
Tj=125°C
I
C
= 50A
Tj=150°C
V
CE
= 10V, V
GE
= 0V, f = 1MHz
V
GE
= 15V
I
C
= 50A
V
CC
= 600V
I
C
= 50A
V
GE
= +15 / -15V
R
G
= 15Ω
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
IGBT Modules
I
F
= 50A
Characteristics
min.
typ.
max.
-
-
1.0
-
-
200
6.0
6.5
7.0
-
2.20
2.65
-
2.55
-
-
2.60
-
-
1.85
2.30
-
2.20
-
-
2.25
-
-
4.2
-
-
0.39
1.20
-
0.09
0.60
-
0.03
-
-
0.53
1.00
-
0.06
0.30
-
2.25
2.70
-
2.50
-
-
2.45
-
-
1.90
2.35
-
2.15
-
-
2.10
-
-
-
0.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
465
3305
-
-
2.10
2.45
2.50
1.85
2.20
2.25
0.39
0.09
0.53
0.06
-
1.70
1.35
-
5000
495
3375
1.0
200
2.55
-
-
2.30
-
-
1.20
0.60
1.00
0.30
1.00
2.05
-
1.0
-
520
3450
Units
mA
nA
V
V
nF
µs
V
µs
mA
nA
V
µs
mA
V
mA
Ω
K
Thermal resistance characteristics
Items
Symbols
Conditions
Inverter IGBT
Inverter FWD
Brake IGBT
Converter Diode
with Thermal Compound
Characteristics
min.
typ.
max.
-
-
0.54
-
-
0.91
-
-
0.72
-
-
0.54
-
0.05
-
Units
Thermal resistance (1device)
Contact thermal resistance (1device) (*4)
Rth(j-c)
Rth(c-f)
°C/W
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
7MBR50VM120-50
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25
o
C / chip
100
V
GE
=20V
15V
12V
100
V
GE
=20V
15V
IGBT Modules
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150
o
C / chip
Collector current: I
C
[A]
Collector current: I
C
[A]
12V
75
75
50
10V
50
10V
25
8V
0
0
1
2
3
4
5
25
8V
0
0
1
2
3
4
5
Collector-Emitter voltage: V
CE
[V]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
V
GE
=15V / chip
100
Tj=150°C
Collector-Emitter voltage: V
CE
[V]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25
o
C / chip
8
75
Tj=125°C
50
Collector - Emitter voltage: V
CE
[V]
Tj=25°C
Collector current: I
C
[A]
6
4
25
2
Ic=100A
Ic=50A
Ic=25A
0
0
1
2
3
4
5
0
5
10
15
20
25
Collector current: I
C
[A]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
V
GE
=0V, f= 1MHz, Tj= 25
o
C
Capacitance: Cies, Coes, Cres [nF]
10.0
Cies
Gate - Emitter voltage: V
GE
[V]
[ Inverter ]
Dynamic gate charge (typ.)
Vcc=600V, Ic=50A, Tj= 25°C
Collector - Emitter voltage: V
CE
[200V/div]
Gate - Emitter voltage:
V
GE
[5V/div]
V
GE
1.0
Cres
Coes
0.1
V
CE
0.0
0
10
20
30
0
100
200
300
400
500
Collector - Emitter voltage: V
CE
[V]
Gate charge: Qg [nC]
3
7MBR50VM120-50
IGBT Modules
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=15Ω, Tj= 125°C
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
10000
10000
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=15Ω, Tj= 150°C
1000
toff
ton
1000
toff
ton
100
tr
tf
100
tr
tf
10
0
25
50
75
100
125
10
0
25
Collector current: I
C
[A]
[ Inverter ]
Switching time vs. gate resistance (typ.)
Vcc=600V, Ic=50A, VGE=±15V, Tj= 125°C
Switching loss : Eon, Eoff, Err [mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
10000
15
Collector current: I
C
[A]
50
75
100
125
[ Inverter ] a
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=15Ω
1000
toff
ton
tr
10
Eon(150°C)
Eon(125°C)
Eoff(150°C)
Eoff(125°C)
100
tf
5
Err(150°C)
Err(125°C)
10
10
100
0
0
25
50
75
100
125
150
Gate resistance : Rg [Ω]
[ Inverter ]
Switching loss vs. gate resistance (typ.)
Vcc=600V, Ic=50A, VGE=±15V
Switching loss : Eon, Eoff, Err [mJ/pulse ]
10
Eon(150°C)
Eon(125°C)
Eoff(150°C)
Eoff(125°C)
4
Err(150°C)
Err(125°C)
Collector current: I
C
[A]
[ Inverter ]
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 15Ω ,Tj <= 125°C
125
100
75
50
25
0
RBSOA
(Repetitive pulse)
6
2
0
10
100
Collector current: IC [A]
8
0
400
800
1200
Gate resistance : Rg [Ω]
Collector-Emitter voltage : V
CE
[V]
4
7MBR50VM120-50
IGBT Modules
[ Inverter ]
Forward current vs. forward on voltage (typ.)
chip
Tj=25°C
[ Inverter ]
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=15Ω
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
1000
70
60
Forward current : IF [A]
50
40
Tj=150°C
30
20
10
0
0
1
2
3
4
5
Tj=125°C
100
trr(150°C)
trr(125°C)
Irr(150°C)
Irr(125°C)
10
0
25
50
75
100
125
150
Forward on voltage : V
F
[V]
[ Converter ]
Forward current vs. forward on voltage (typ.)
chip
100
Tj=25°C
Tj=125°
C
Forward current : I
F
[A]
Forward current : IF [A]
75
50
25
0
0
1
2
3
4
Forward on voltage : V
FM
[V]
[ Thermistor ]
Temperature characteristic (typ.)
100
Transient thermal resistance (max.)
Thermal resistanse : Rth(j-c) [ °C/W ]
10.00
1.00
IGBT[Brake]
FWD[Inverter]
Resistance : R [kΩ]
10
IGBT[Inverter]
Conv. Diode
0.10
1
0.01
0.001
0.010
0.100
1.000
0.1
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
Pulse width : Pw [sec]
Temperature [°C ]
5
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