SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
・V
DSS
=600V, I
D
=10A
・Drain-Source
ON Resistance :
R
DS(ON)
(Max)=0.73Ω @V
GS
=10V
・Qg(typ.)=
29.5nC
D
N
N
A
KF10N60P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF10N60P
O
C
F
E
G
B
Q
I
K
M
L
J
H
P
DIM MILLIMETERS
_
9.9 + 0.2
A
B
C
D
E
F
G
H
I
J
K
L
M
N
15.95 MAX
1.3+0.1/-0.05
_
0.8 + 0.1
_
3.6 + 0.2
_
2.8 + 0.1
3.7
0.5+0.1/-0.05
1.5
_
13.08 + 0.3
1.46
_
1.4 + 0.1
_
1.27 + 0.1
_
2.54 + 0.2
_
4.5 + 0.2
_
2.4 + 0.2
_
9.2 + 0.2
MAXIMUM RATING
(Tc=25℃)
RATING
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
@T
C
=25℃
Drain Current
@T
C
=100℃
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25℃
Derate above 25℃
T
j
T
stg
SYMBOL
KF10N60P
V
DSS
V
GSS
I
D
I
DP
E
AS
E
AR
dv/dt
P
D
178
1.43
150
-55½150
10
6
25
400
16.5
4.5
46
0.37
600
±30
10*
6*
25*
A
F
UNIT
KF10N60F
V
V
O
1
2
3
1. GATE
2. DRAIN
3. SOURCE
P
Q
TO-220AB
A
KF10N60F
C
mJ
mJ
V/ns
W
W/℃
℃
℃
K
O
B
E
G
DIM
MILLIMETERS
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
L
M
J
R
D
N
N
H
Thermal Resistance, Junction-to-Case
Thermal Resistance,
Junction-to-Ambient
R
thJC
R
thJA
0.7
62.5
2.7
62.5
℃/W
℃/W
1
2
3
Q
* : Drain current limited by maximum junction temperature.
1. GATE
2. DRAIN
3. SOURCE
A
B
C
D
E
F
G
H
J
K
L
M
N
O
Q
R
_
10.16
+
0.2
_
15.87
+
0.2
_
2.54
+
0.2
_
0.8
+
0.1
_
3.18
+
0.1
_
3.3
+
0.1
_
12.57
+
0.2
_
0.1
0.5
+
_
13.0
+
0.5
_
3.23
+
0.1
1.47 MAX
1.47 MAX
_
2.54
+
0.2
_
6.68
+
0.2
_
4.7
+
0.2
_
2.76
+
0.2
PIN CONNECTION
(KF10N60P, KF10N60F)
D
TO-220IS (1)
G
S
2010. 8. 16
Revision No : 0
1/7
KF10N60P/F
ELECTRICAL CHARACTERISTICS
(Tc=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250μ V
GS
=0V
A,
I
D
=250μ Referenced to 25℃
A,
V
DS
=600V, V
GS
=0V
V
DS
=V
GS
, I
D
=250μ
A
V
GS
=±30V, V
DS
=0V
V
GS
=10V, I
D
=5A
600
-
-
2.5
-
-
-
0.6
-
-
-
0.59
-
-
10
4.5
±100
0.73
V
V/℃
μ
A
V
nA
Ω
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
j
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
I
DSS
V
th
I
GSS
R
DS(ON)
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SP
V
SD
t
rr
Q
rr
V
GS
<V
th
I
S
=10A, V
GS
=0V
I
S
=10A, V
GS
=0V,
s
dIs/dt=100A/μ
-
-
-
-
-
-
-
-
350
4.2
10
A
40
1.4
-
-
V
ns
μ
C
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
DS
=25V, V
GS
=0V, f=1.0MHz
V
DD
=300V
I
D
=10A
R
G
=25Ω
(Note4,5)
V
DS
=480V, I
D
=10A
V
GS
=10V
(Note4,5)
-
-
-
-
-
-
-
-
-
-
26
6
10
32
35
88
30
1350
140
13
-
-
-
-
-
ns
-
-
-
-
-
pF
nC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =5.5mH, I
S
=10A, V
DD
=50V, R
G
=25Ω, Starting T
j
=25℃.
Note 3) I
S
≤10A,
dI/dt≤200A/㎲, V
DD
≤BV
DSS
, Starting T
j
=25℃.
Note 4) Pulse Test : Pulse width
≤
300㎲, Duty Cycle
≤
2%.
Note 5) Essentially independent of operating temperature.
Marking
1
1
KF10N60
801
P
2
KF10N60
813
F
2
1
PRODUCT NAME
2
LOT NO
2010. 8. 16
Revision No : 0
2/7
KF10N60P/F
Fig1. I
D
- V
DS
100
V
DS
=30V
Fig2. I
D
- V
GS
Drain Current I
D
(A)
10
V
GS
=7V
V
GS
=5V
Drain Current I
D
(A)
V
GS
=10V
10
1
10
0
100
C
25
C
1
0.1
0.1
1
10
100
10
-1
2
4
6
8
10
Drain - Source Voltage V
DS
(V)
Gate - Source Voltage V
GS
(V)
Fig3. BV
DSS
- Tj
Normalized Breakdown Voltage BV
DSS
1.2
V
GS
= 0V
I
DS
= 250
Fig4. R
DS(ON)
- I
D
2.4
On - Resistance R
DS(ON)
(Ω)
2.0
1.6
1.2
0.8
V
GS
=10V
1.1
1.0
V
GS
=6V
0.9
0.4
0
0
0.8
-100
-50
0
50
100
150
5
10
15
20
Junction Temperature Tj ( C )
Drain Current I
D
(A)
Fig5. I
S
- V
SD
10
2
Fig6. R
DS(ON)
- Tj
3.0
25
C
V
GS
=10V
I
DS
= 5A
Reverse Drain Current I
S
(A)
10
1
Normalized On Resistance
100
C
2.5
2.0
1.5
1.0
0.5
10
0
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
1.8
0.0
-100
-50
0
50
100
150
Source - Drain Voltage V
SD
(V)
Junction Temperature Tj ( C)
2010. 8. 16
Revision No : 0
3/7
KF10N60P/F
Fig 7. C - V
DS
10
4
12
I
D
=10A
Fig8. Qg- V
GS
Gate - Source Voltage V
GS
(V)
V
DS
= 480V
V
DS
= 300V
V
DS
= 120V
10
8
6
4
2
0
0
5
10
Capacitance (pF)
Ciss
10
3
Coss
10
2
Crss
10
1
0
10
20
30
40
15
20
25
30
35
40
Drain - Source Voltage V
DS
(V)
Gate - Charge Qg (nC)
Fig9. Safe Operation Area
10
2
Fig10. Safe Operation Area
10
2
(KF10N60P)
10µs
(KF10N60F)
Drain Current ID (A)
10
1
Drain Current ID (A)
100µs
1ms
10
1
10µs
100µs
10
0
10ms
Operation in this
area is limited by R
DS(ON)
10
0
DC
Operation in this
area is limited by R
DS(ON)
1ms
10ms
DC
10
-1
Tc= 25 C
Tj = 150 C
Single pulse
10
-1
Tc= 25 C
Tj = 150 C
Single pulse
10
0
10
2
10
1
10
2
10
3
10
0
10
2
10
1
10
2
10
3
Drain - Source Voltage V
DS
(V)
Drain - Source Voltage V
DS
(V)
Fig11. I
D
- T
j
14
12
Drain Current I
D
(A)
10
8
6
4
2
0
25
50
125
150
75
100
Junction Temperature Tj (
C
)
2010. 8. 16
Revision No : 0
4/7
KF10N60P/F
Fig12. Transient Thermal Response Curve
(KF10N60P)
10
0
Transient Thermal Resistance
Duty=0.5
0.2
10
-1
0.1
0.05
P
DM
t
1
0.02
0.01
t
2
Single Pulse
- Duty Factor, D= t
1
/t
2
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-5
10
-4
TIME (sec)
Fig13. Transient Thermal Response Curve
(KF10N60F)
10
1
Transient Thermal Resistance
Duty=0.5
10
0
0.2
0.1
0.05
P
DM
t
1
t
2
10
-1
0.02
0.01
- Duty Factor, D= t
1
/t
2
10
-2
10
-5
Single Pulse
10
-4
10
-3
10
-2
10
-1
10
0
10
1
TIME (sec)
2010. 8. 16
Revision No : 0
5/7
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